BC80725E6327
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- Mfr.Part #
- BC80725E6327
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.5A SOT23-3
- Stock
- 10,429
- In Stock ：
- 10,429
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Reach Compliance Code :
- Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Published :
- 2007
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- Polarity/Channel Type :
- PNP
- Qualification Status :
- Not Qualified
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- Matte Tin (Sn)
- Terminal Position :
- Dual
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Current - Collector (Ic) (Max) :
- 500mA
- Voltage - Collector Emitter Breakdown (Max) :
- 45V
- Configuration :
- Single
- Transition Frequency :
- 200MHz
- Terminal Form :
- Gull wing
- Operating Temperature :
- 150°C TJ
- JESD-30 Code :
- R-PDSO-G3
- Number of Terminations :
- 3
- Frequency - Transition :
- 200MHz
- Base Part Number :
- BC807
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Power - Max :
- 330mW
- ECCN Code :
- EAR99
- Surface Mount :
- yes
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- 260
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Power Dissipation-Max (Abs) :
- 0.33W
- Transistor Type :
- PNP
- RoHS Status :
- RoHS Compliant
- Datasheets
- BC80725E6327
BC80725E6327 Documents
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC 807-25 E6327 Overview
In this device, the DC current gain is 160 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 50mA, 500mA.200MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 45V.
BC 807-25 E6327 Features
the DC current gain for this device is 160 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
a transition frequency of 200MHz
BC 807-25 E6327 Applications
There are a lot of Infineon Technologies
BC 807-25 E6327 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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