BC80716MTF
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- Mfr.Part #
- BC80716MTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.8A SOT23-3
- Stock
- 3,438
- In Stock ：
- 3,438
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 310mW
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C TJ
- Collector Emitter Saturation Voltage :
- -700mV
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 5 days ago)
- Width :
- 1.3mm
- RoHS Status :
- RoHS Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Height :
- 970μm
- Current - Collector Cutoff (Max) :
- 100nA
- Collector Base Voltage (VCBO) :
- -50V
- Lead Free :
- Lead Free
- Length :
- 2.9mm
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- PNP
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- ECCN Code :
- EAR99
- Factory Lead Time :
- 6 Weeks
- Power Dissipation :
- 310mW
- Max Breakdown Voltage :
- 45V
- Transition Frequency :
- 100MHz
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Base Part Number :
- BC807
- Terminal Position :
- Dual
- Polarity/Channel Type :
- PNP
- Emitter Base Voltage (VEBO) :
- -5V
- Published :
- 2002
- Collector Emitter Voltage (VCEO) :
- 45V
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Frequency :
- 100MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gain Bandwidth Product :
- 100MHz
- Contact Plating :
- Tin
- Max Collector Current :
- 800mA
- Weight :
- 30mg
- JESD-609 Code :
- e3
- Collector Emitter Breakdown Voltage :
- 45V
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- hFE Min :
- 100
- Datasheets
- BC80716MTF
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC80716MTF Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -700mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 45V volts.During maximum operation, collector current can be as low as 800mA volts.
BC80716MTF Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
a transition frequency of 100MHz
BC80716MTF Applications
There are a lot of ON Semiconductor
BC80716MTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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