BC80716MTF
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- Mfr.Part #
- BC80716MTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.8A SOT23-3
- Stock
- 3,438
- In Stock ：
- 3,438
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- -50V
- Collector Emitter Voltage (VCEO) :
- 45V
- Packaging :
- Tape and Reel (TR)
- hFE Min :
- 100
- Terminal Position :
- Dual
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Polarity/Channel Type :
- PNP
- Mounting Type :
- Surface Mount
- Gain Bandwidth Product :
- 100MHz
- Weight :
- 30mg
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Contact Plating :
- Tin
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 310mW
- Height :
- 970μm
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 5 days ago)
- Max Breakdown Voltage :
- 45V
- Terminal Form :
- Gull wing
- Transistor Type :
- PNP
- Number of Pins :
- 3
- Width :
- 1.3mm
- Power Dissipation :
- 310mW
- Emitter Base Voltage (VEBO) :
- -5V
- JESD-609 Code :
- e3
- Frequency :
- 100MHz
- Pbfree Code :
- yes
- RoHS Status :
- RoHS Compliant
- Current - Collector Cutoff (Max) :
- 100nA
- Published :
- 2002
- Operating Temperature :
- 150°C TJ
- Collector Emitter Saturation Voltage :
- -700mV
- Length :
- 2.9mm
- Max Collector Current :
- 800mA
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Base Part Number :
- BC807
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 45V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 6 Weeks
- ECCN Code :
- EAR99
- Mount :
- Surface Mount
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Transition Frequency :
- 100MHz
- Datasheets
- BC80716MTF
BC80716MTF Documents
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC80716MTF Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -700mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 45V volts.During maximum operation, collector current can be as low as 800mA volts.
BC80716MTF Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
a transition frequency of 100MHz
BC80716MTF Applications
There are a lot of ON Semiconductor
BC80716MTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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