BC80716MTF
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- Mfr.Part #
- BC80716MTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.8A SOT23-3
- Stock
- 3,438
- In Stock ：
- 3,438
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 6 Weeks
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 310mW
- Gain Bandwidth Product :
- 100MHz
- Frequency :
- 100MHz
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage :
- 45V
- Number of Elements :
- 1
- Terminal Position :
- Dual
- Height :
- 970μm
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- -5V
- Published :
- 2002
- Element Configuration :
- Single
- Base Part Number :
- BC807
- Lead Free :
- Lead Free
- RoHS Status :
- RoHS Compliant
- Max Breakdown Voltage :
- 45V
- Number of Pins :
- 3
- Max Collector Current :
- 800mA
- Weight :
- 30mg
- Collector Emitter Voltage (VCEO) :
- 45V
- Power Dissipation :
- 310mW
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- SWITCHING
- Collector Base Voltage (VCBO) :
- -50V
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Operating Temperature :
- 150°C TJ
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 1.3mm
- Terminal Form :
- Gull wing
- Length :
- 2.9mm
- Current - Collector Cutoff (Max) :
- 100nA
- Contact Plating :
- Tin
- Transition Frequency :
- 100MHz
- hFE Min :
- 100
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 5 days ago)
- Polarity/Channel Type :
- PNP
- JESD-609 Code :
- e3
- Collector Emitter Saturation Voltage :
- -700mV
- Pbfree Code :
- yes
- Transistor Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Datasheets
- BC80716MTF
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC80716MTF Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -700mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 45V volts.During maximum operation, collector current can be as low as 800mA volts.
BC80716MTF Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
a transition frequency of 100MHz
BC80716MTF Applications
There are a lot of ON Semiconductor
BC80716MTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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