BC80716MTF
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- Mfr.Part #
- BC80716MTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.8A SOT23-3
- Stock
- 3,438
- In Stock ：
- 3,438
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 100nA
- Width :
- 1.3mm
- Emitter Base Voltage (VEBO) :
- -5V
- Gain Bandwidth Product :
- 100MHz
- Height :
- 970μm
- Lead Free :
- Lead Free
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- ECCN Code :
- EAR99
- Frequency :
- 100MHz
- Max Collector Current :
- 800mA
- Packaging :
- Tape and Reel (TR)
- Polarity/Channel Type :
- PNP
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- Transition Frequency :
- 100MHz
- Base Part Number :
- BC807
- Operating Temperature :
- 150°C TJ
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 45V
- hFE Min :
- 100
- Transistor Type :
- PNP
- Length :
- 2.9mm
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Contact Plating :
- Tin
- Collector Base Voltage (VCBO) :
- -50V
- Collector Emitter Saturation Voltage :
- -700mV
- Published :
- 2002
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Mount :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 45V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 5 days ago)
- Transistor Element Material :
- SILICON
- Weight :
- 30mg
- Transistor Application :
- SWITCHING
- Terminal Form :
- Gull wing
- RoHS Status :
- RoHS Compliant
- Power Dissipation :
- 310mW
- Max Power Dissipation :
- 310mW
- Number of Elements :
- 1
- Max Breakdown Voltage :
- 45V
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Factory Lead Time :
- 6 Weeks
- Datasheets
- BC80716MTF
BC80716MTF Documents
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC80716MTF Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -700mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 45V volts.During maximum operation, collector current can be as low as 800mA volts.
BC80716MTF Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
a transition frequency of 100MHz
BC80716MTF Applications
There are a lot of ON Semiconductor
BC80716MTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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