BC80716E6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Single

Power Dissipation-Max (Abs) :

0.33W

Frequency - Transition :

200MHz

JESD-30 Code :

R-PDSO-G3

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Number of Terminations :

3

Package / Case :

TO-236-3, SC-59, SOT-23-3

Transistor Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

700mV @ 50mA, 500mA

Current - Collector Cutoff (Max) :

100nA ICBO

Voltage - Collector Emitter Breakdown (Max) :

45V

Current - Collector (Ic) (Max) :

500mA

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Base Part Number :

BC807

Terminal Finish :

MATTE TIN

Operating Temperature :

150°C TJ

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 100mA 1V

RoHS Status :

RoHS Compliant

Time@Peak Reflow Temperature-Max (s) :

40

JESD-609 Code :

e3

Number of Elements :

1

Power - Max :

330mW

Reach Compliance Code :

Compliant

ECCN Code :

EAR99

Configuration :

Single

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Mounting Type :

Surface Mount

Transition Frequency :

200MHz

Published :

2007

Polarity/Channel Type :

PNP