BC807-40WT1G
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- Mfr.Part #
- BC807-40WT1G
- Manufacturer
- onsemi
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.5A SC70-3
- Stock
- 9,042
- In Stock ：
- 9,042
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e3
- Contact Plating :
- Tin
- Height :
- 900μm
- Current - Collector (Ic) (Max) :
- 500mA
- Factory Lead Time :
- 5 Weeks
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100mA 1V
- Package / Case :
- SC-70, SOT-323
- Pbfree Code :
- yes
- Pin Count :
- 3
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Qualification Status :
- Not Qualified
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- -700mV
- Halogen Free :
- Halogen Free
- Collector Emitter Breakdown Voltage :
- 45V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Max Power Dissipation :
- 460mW
- Surface Mount :
- yes
- Published :
- 2001
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Polarity/Channel Type :
- PNP
- Frequency :
- 100MHz
- Transition Frequency :
- 100MHz
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 45V
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Max Collector Current :
- 500mA
- Collector Base Voltage (VCBO) :
- 50V
- Power Dissipation :
- 460mW
- Emitter Base Voltage (VEBO) :
- 5V
- Base Part Number :
- BC807
- Transistor Element Material :
- SILICON
- Width :
- 1.35mm
- Number of Terminations :
- 3
- Terminal Position :
- Dual
- Length :
- 2.2mm
- Transistor Type :
- PNP
- Datasheets
- BC807-40WT1G
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC807-40WT1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 250 @ 100mA 1V DC current gain.As it features a collector emitter saturation voltage of -700mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.When collector current reaches its maximum, it can reach 500mA volts.
BC807-40WT1G Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC807-40WT1G Applications
There are a lot of ON Semiconductor
BC807-40WT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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