BC807-40LT3G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Pbfree Code :

yes

Transition Frequency :

100MHz

Max Power Dissipation :

300mW

Max Breakdown Voltage :

45V

Terminal Finish :

Tin (Sn)

Terminal Position :

Dual

Gain Bandwidth Product :

100MHz

Number of Terminations :

3

Width :

1.3mm

Package / Case :

TO-236-3, SC-59, SOT-23-3

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

40

Peak Reflow Temperature (Cel) :

260

Collector Base Voltage (VCBO) :

50V

DC Current Gain (hFE) (Min) @ Ic, Vce :

250 @ 100mA 1V

Emitter Base Voltage (VEBO) :

5V

Radiation Hardening :

No

Terminal Form :

Gull wing

Pin Count :

3

Element Configuration :

Single

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Frequency :

100MHz

Surface Mount :

yes

hFE Min :

250

Factory Lead Time :

4 Weeks

REACH SVHC :

No SVHC

Power Dissipation :

300mW

Collector Emitter Voltage (VCEO) :

45V

Height :

940μm

Polarity/Channel Type :

PNP

Transistor Type :

PNP

JESD-609 Code :

e3

Base Part Number :

BC807

ECCN Code :

EAR99

Max Collector Current :

500mA

Collector Emitter Breakdown Voltage :

45V

Length :

2.9mm

Current - Collector Cutoff (Max) :

100nA ICBO

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Published :

2001

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Collector Emitter Saturation Voltage :

-700mV

Halogen Free :

Halogen Free

Vce Saturation (Max) @ Ib, Ic :

700mV @ 50mA, 500mA

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Lead Free :

Lead Free