BC807-40LT3G
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- Mfr.Part #
- BC807-40LT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.5A SOT23-3
- Stock
- 36,508
- In Stock ：
- 36,508
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency :
- 100MHz
- Terminal Finish :
- Tin (Sn)
- Collector Base Voltage (VCBO) :
- 50V
- Transition Frequency :
- 100MHz
- Number of Pins :
- 3
- Published :
- 2001
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Max Collector Current :
- 500mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 2.9mm
- Surface Mount :
- yes
- Transistor Type :
- PNP
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100mA 1V
- Max Breakdown Voltage :
- 45V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- REACH SVHC :
- No SVHC
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Base Part Number :
- BC807
- hFE Min :
- 250
- Gain Bandwidth Product :
- 100MHz
- Power Dissipation :
- 300mW
- Emitter Base Voltage (VEBO) :
- 5V
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- PNP
- Width :
- 1.3mm
- Collector Emitter Breakdown Voltage :
- 45V
- RoHS Status :
- ROHS3 Compliant
- Height :
- 940μm
- Pin Count :
- 3
- Factory Lead Time :
- 4 Weeks
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Halogen Free :
- Halogen Free
- Terminal Position :
- Dual
- Terminal Form :
- Gull wing
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Saturation Voltage :
- -700mV
- Collector Emitter Voltage (VCEO) :
- 45V
- Number of Elements :
- 1
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 300mW
- Datasheets
- BC807-40LT3G
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC807-40LT3G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 250 @ 100mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -700mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 45V volts.During maximum operation, collector current can be as low as 500mA volts.
BC807-40LT3G Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC807-40LT3G Applications
There are a lot of ON Semiconductor
BC807-40LT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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