BC807-40LT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Packaging :

Cut Tape (CT)

Contact Plating :

Tin

Collector Emitter Voltage (VCEO) :

45V

Frequency :

100MHz

JESD-609 Code :

e3

Element Configuration :

Single

Transition Frequency :

100MHz

Length :

2.9mm

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Polarity/Channel Type :

PNP

Max Breakdown Voltage :

45V

ECCN Code :

EAR99

Number of Terminations :

3

Factory Lead Time :

4 Weeks

Published :

2007

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

REACH SVHC :

No SVHC

Pin Count :

3

Surface Mount :

yes

Max Power Dissipation :

300mW

Base Part Number :

BC807

Transistor Type :

PNP

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

hFE Min :

250

Gain Bandwidth Product :

100MHz

Collector Emitter Saturation Voltage :

-700mV

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

40

Collector Base Voltage (VCBO) :

50V

Max Collector Current :

500mA

Number of Elements :

1

Terminal Form :

Gull wing

Emitter Base Voltage (VEBO) :

5V

Collector Emitter Breakdown Voltage :

45V

Mounting Type :

Surface Mount

Height :

940μm

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Lead Free :

Lead Free

Number of Pins :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

250 @ 100mA 1V

Current - Collector Cutoff (Max) :

100nA ICBO

Width :

1.3mm

Terminal Position :

Dual

Power Dissipation :

300mW

Halogen Free :

Halogen Free

Vce Saturation (Max) @ Ib, Ic :

700mV @ 50mA, 500mA