BC807-40LT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Surface Mount :

yes

Lead Free :

Lead Free

Max Power Dissipation :

300mW

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual

Width :

1.3mm

Published :

2007

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Contact Plating :

Tin

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Element Configuration :

Single

Transistor Type :

PNP

Height :

940μm

REACH SVHC :

No SVHC

JESD-609 Code :

e3

Collector Emitter Saturation Voltage :

-700mV

hFE Min :

250

Gain Bandwidth Product :

100MHz

Collector Base Voltage (VCBO) :

50V

Length :

2.9mm

Frequency :

100MHz

Terminal Form :

Gull wing

Pbfree Code :

yes

Current - Collector Cutoff (Max) :

100nA ICBO

Polarity/Channel Type :

PNP

ECCN Code :

EAR99

Pin Count :

3

Max Collector Current :

500mA

Time@Peak Reflow Temperature-Max (s) :

40

Packaging :

Cut Tape (CT)

Collector Emitter Breakdown Voltage :

45V

Factory Lead Time :

4 Weeks

Number of Elements :

1

Mounting Type :

Surface Mount

Package / Case :

TO-236-3, SC-59, SOT-23-3

Operating Temperature :

-55°C~150°C TJ

Emitter Base Voltage (VEBO) :

5V

Halogen Free :

Halogen Free

Vce Saturation (Max) @ Ib, Ic :

700mV @ 50mA, 500mA

Max Breakdown Voltage :

45V

DC Current Gain (hFE) (Min) @ Ic, Vce :

250 @ 100mA 1V

Radiation Hardening :

No

Transistor Element Material :

SILICON

Power Dissipation :

300mW

Base Part Number :

BC807

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

45V

Transition Frequency :

100MHz