BC807-40LT1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Gain Bandwidth Product :

100MHz

Surface Mount :

yes

Collector Emitter Breakdown Voltage :

45V

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

RoHS Status :

ROHS3 Compliant

Polarity/Channel Type :

PNP

Transistor Type :

PNP

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~150°C TJ

Height :

940μm

Packaging :

Cut Tape (CT)

Lead Free :

Lead Free

Frequency :

100MHz

JESD-609 Code :

e3

Emitter Base Voltage (VEBO) :

5V

DC Current Gain (hFE) (Min) @ Ic, Vce :

250 @ 100mA 1V

Base Part Number :

BC807

Halogen Free :

Halogen Free

Power Dissipation :

300mW

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

260

Collector Base Voltage (VCBO) :

50V

Radiation Hardening :

No

Time@Peak Reflow Temperature-Max (s) :

40

hFE Min :

250

Package / Case :

TO-236-3, SC-59, SOT-23-3

Collector Emitter Voltage (VCEO) :

45V

Contact Plating :

Tin

Max Power Dissipation :

300mW

ECCN Code :

EAR99

Terminal Position :

Dual

Length :

2.9mm

Number of Terminations :

3

Published :

2007

Max Breakdown Voltage :

45V

Mounting Type :

Surface Mount

Collector Emitter Saturation Voltage :

-700mV

Number of Pins :

3

Transistor Element Material :

SILICON

Transition Frequency :

100MHz

Pin Count :

3

Width :

1.3mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

500mA

Pbfree Code :

yes

Terminal Form :

Gull wing

Factory Lead Time :

4 Weeks

Vce Saturation (Max) @ Ib, Ic :

700mV @ 50mA, 500mA

Number of Elements :

1

Current - Collector Cutoff (Max) :

100nA ICBO