BC807-40-7
- Mfr.Part #
- BC807-40-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.5A SOT23-3
- Stock
- 23,913
- In Stock :
- 23,913
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100mA 1V
- Transition Frequency :
- 100MHz
- Number of Terminations :
- 3
- Terminal Form :
- Gull wing
- Length :
- 3.05mm
- Emitter Base Voltage (VEBO) :
- -5V
- Weight :
- 7.994566mg
- Collector Emitter Voltage (VCEO) :
- -45V
- Radiation Hardening :
- No
- Terminal Position :
- Dual
- Current - Collector (Ic) (Max) :
- 500mA
- Contact Plating :
- Tin
- Collector Base Voltage (VCBO) :
- -50V
- Mount :
- Surface Mount
- Number of Pins :
- 3
- Frequency :
- 100MHz
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 100nA
- Additional Feature :
- High Reliability
- Max Collector Current :
- -500mA
- Height :
- 1.1mm
- REACH SVHC :
- No SVHC
- Base Part Number :
- BC807
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Power Dissipation :
- 310mW
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Elements :
- 1
- Width :
- 1.4mm
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Published :
- 2008
- Collector Emitter Breakdown Voltage :
- -45V
- Factory Lead Time :
- 15 Weeks
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 310mW
- Max Breakdown Voltage :
- 45V
- Max Junction Temperature (Tj) :
- 150°C
- Gain Bandwidth Product :
- 100MHz
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Type :
- PNP
- hFE Min :
- 250
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Pin Count :
- 3
- Collector Emitter Saturation Voltage :
- -700mV
- Datasheets
- BC807-40-7
BC807-40-7 Documents

PNP -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC807-40-7-F Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 250 @ 100mA 1V DC current gain.As it features a collector emitter saturation voltage of -700mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at -5V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 45V volts.When collector current reaches its maximum, it can reach -500mA volts.
BC807-40-7-F Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
a transition frequency of 100MHz
BC807-40-7-F Applications
There are a lot of Diodes Incorporated
BC807-40-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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