BC807-25WT1G

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Mfr.Part #
BC807-25WT1G
Manufacturer
onsemi
Package / Case
SC-70, SOT-323
Datasheet
Download
Description
TRANS PNP 45V 0.5A SC70-3
Stock
18,426
In Stock :
18,426

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Transition Frequency :
100MHz
Collector Emitter Breakdown Voltage :
45V
Lead Free :
Lead Free
RoHS Status :
ROHS3 Compliant
Pin Count :
3
Terminal Position :
Dual
Packaging :
Tape and Reel (TR)
Vce Saturation (Max) @ Ib, Ic :
700mV @ 50mA, 500mA
REACH SVHC :
No SVHC
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Factory Lead Time :
8 Weeks
JESD-609 Code :
e3
Frequency :
100MHz
Radiation Hardening :
No
Package / Case :
SC-70, SOT-323
Polarity/Channel Type :
PNP
Number of Pins :
3
Contact Plating :
Tin
Element Configuration :
Single
Max Breakdown Voltage :
45V
Number of Elements :
1
Transistor Type :
PNP
Height :
900μm
Mounting Type :
Surface Mount
Terminal Form :
Gull wing
Collector Base Voltage (VCBO) :
50V
Max Power Dissipation :
460mW
Power Dissipation :
460mW
Pbfree Code :
yes
Collector Emitter Voltage (VCEO) :
45V
Emitter Base Voltage (VEBO) :
5V
Published :
2011
Transistor Element Material :
SILICON
Max Collector Current :
500mA
Halogen Free :
Halogen Free
Current - Collector Cutoff (Max) :
100nA ICBO
Base Part Number :
BC807
Operating Temperature :
-55°C~150°C TJ
Number of Terminations :
3
DC Current Gain (hFE) (Min) @ Ic, Vce :
160 @ 100mA 1V
Surface Mount :
yes
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
ECCN Code :
EAR99
Collector Emitter Saturation Voltage :
-700mV
Width :
1.35mm
Length :
2.2mm
Datasheets
BC807-25WT1G
Introducing Transistors - Bipolar (BJT) - Single onsemi BC807-25WT1G from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:SC-70, SOT-323, Number of Pins:3, Mounting Type:Surface Mount, Base Part Number:BC807, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, BC807-25WT1G pinout, BC807-25WT1G datasheet PDF, BC807-25WT1G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BC807-25WT1G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BC807-25WT1G


PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount

BC807-25WT1G Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 160 @ 100mA 1V.The collector emitter saturation voltage is -700mV, which allows for maximum design flexibility.When VCE saturation is 700mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 100MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 500mA volts can be achieved.

BC807-25WT1G Features


the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz


BC807-25WT1G Applications


There are a lot of ON Semiconductor
BC807-25WT1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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