BC807-25WT1G
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- Mfr.Part #
- BC807-25WT1G
- Manufacturer
- onsemi
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.5A SC70-3
- Stock
- 18,426
- In Stock ：
- 18,426
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Form :
- Gull wing
- Operating Temperature :
- -55°C~150°C TJ
- Width :
- 1.35mm
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- ECCN Code :
- EAR99
- Package / Case :
- SC-70, SOT-323
- Base Part Number :
- BC807
- REACH SVHC :
- No SVHC
- Collector Emitter Breakdown Voltage :
- 45V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Max Breakdown Voltage :
- 45V
- Frequency :
- 100MHz
- Terminal Position :
- Dual
- Surface Mount :
- yes
- Factory Lead Time :
- 8 Weeks
- Transistor Element Material :
- SILICON
- Length :
- 2.2mm
- Height :
- 900μm
- Emitter Base Voltage (VEBO) :
- 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 500mA
- Published :
- 2011
- Transition Frequency :
- 100MHz
- Pbfree Code :
- yes
- Transistor Type :
- PNP
- Number of Pins :
- 3
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Collector Emitter Saturation Voltage :
- -700mV
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 460mW
- Contact Plating :
- Tin
- Halogen Free :
- Halogen Free
- Collector Base Voltage (VCBO) :
- 50V
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Power Dissipation :
- 460mW
- Collector Emitter Voltage (VCEO) :
- 45V
- Polarity/Channel Type :
- PNP
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Datasheets
- BC807-25WT1G
BC807-25WT1G Documents
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC807-25WT1G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 160 @ 100mA 1V.The collector emitter saturation voltage is -700mV, which allows for maximum design flexibility.When VCE saturation is 700mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 100MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 500mA volts can be achieved.
BC807-25WT1G Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC807-25WT1G Applications
There are a lot of ON Semiconductor
BC807-25WT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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