BC807-25WT1G
- Mfr.Part #
- BC807-25WT1G
- Manufacturer
- onsemi
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.5A SC70-3
- Stock
- 18,426
- In Stock :
- 18,426
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 100MHz
- Collector Emitter Breakdown Voltage :
- 45V
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Terminal Position :
- Dual
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- REACH SVHC :
- No SVHC
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Factory Lead Time :
- 8 Weeks
- JESD-609 Code :
- e3
- Frequency :
- 100MHz
- Radiation Hardening :
- No
- Package / Case :
- SC-70, SOT-323
- Polarity/Channel Type :
- PNP
- Number of Pins :
- 3
- Contact Plating :
- Tin
- Element Configuration :
- Single
- Max Breakdown Voltage :
- 45V
- Number of Elements :
- 1
- Transistor Type :
- PNP
- Height :
- 900μm
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- Collector Base Voltage (VCBO) :
- 50V
- Max Power Dissipation :
- 460mW
- Power Dissipation :
- 460mW
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 45V
- Emitter Base Voltage (VEBO) :
- 5V
- Published :
- 2011
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 500mA
- Halogen Free :
- Halogen Free
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Base Part Number :
- BC807
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- Surface Mount :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- -700mV
- Width :
- 1.35mm
- Length :
- 2.2mm
- Datasheets
- BC807-25WT1G

PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC807-25WT1G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 160 @ 100mA 1V.The collector emitter saturation voltage is -700mV, which allows for maximum design flexibility.When VCE saturation is 700mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 100MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 500mA volts can be achieved.
BC807-25WT1G Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC807-25WT1G Applications
There are a lot of ON Semiconductor
BC807-25WT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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