BC807-25W,135
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- Mfr.Part #
- BC807-25W,135
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NOW NEXPERIA BC807-25W - SMALL S
- Stock
- 9,800
- In Stock ：
- 9,800
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- Package / Case :
- SC-70, SOT-323
- Element Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- VCEsat-Max :
- 0.7 V
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Frequency :
- 80MHz
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Type :
- PNP
- Number of Terminations :
- 3
- Mount :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 5V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Power Dissipation :
- 200mW
- Base Part Number :
- BC807
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Terminal Position :
- Dual
- Polarity/Channel Type :
- PNP
- Max Collector Current :
- 500mA
- Number of Pins :
- 3
- Power Dissipation :
- 200mW
- Operating Temperature :
- 150°C TJ
- Terminal Form :
- Gull wing
- Pin Count :
- 3
- Published :
- 2009
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 100MHz
- Contact Plating :
- Tin
- Transistor Application :
- SWITCHING
- Collector Emitter Breakdown Voltage :
- 45V
- Series :
- Automotive, AEC-Q101
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Gain Bandwidth Product :
- 80MHz
- Factory Lead Time :
- 4 Weeks
- Collector Emitter Voltage (VCEO) :
- 45V
- Collector Base Voltage (VCBO) :
- 50V
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- BC807-25W,135
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC807-25W,135 Overview
In this device, the DC current gain is 160 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 50mA, 500mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.100MHz is present in the transition frequency.Maximum collector currents can be below 500mA volts.
BC807-25W,135 Features
the DC current gain for this device is 160 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC807-25W,135 Applications
There are a lot of Nexperia USA Inc.
BC807-25W,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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