BC807-25W,135
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- Mfr.Part #
- BC807-25W,135
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NOW NEXPERIA BC807-25W - SMALL S
- Stock
- 9,800
- In Stock ：
- 9,800
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Surface Mount
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Terminal Position :
- Dual
- Power Dissipation :
- 200mW
- Factory Lead Time :
- 4 Weeks
- Emitter Base Voltage (VEBO) :
- 5V
- Base Part Number :
- BC807
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- PNP
- Max Power Dissipation :
- 200mW
- Collector Emitter Breakdown Voltage :
- 45V
- Package / Case :
- SC-70, SOT-323
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- Collector Emitter Voltage (VCEO) :
- 45V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Elements :
- 1
- Element Configuration :
- Single
- Frequency :
- 80MHz
- Pin Count :
- 3
- Max Collector Current :
- 500mA
- Contact Plating :
- Tin
- Number of Pins :
- 3
- VCEsat-Max :
- 0.7 V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Transition Frequency :
- 100MHz
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e3
- Series :
- Automotive, AEC-Q101
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Type :
- PNP
- Collector Base Voltage (VCBO) :
- 50V
- Operating Temperature :
- 150°C TJ
- Gain Bandwidth Product :
- 80MHz
- Radiation Hardening :
- No
- Published :
- 2009
- Mounting Type :
- Surface Mount
- Datasheets
- BC807-25W,135
BC807-25W,135 Documents
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC807-25W,135 Overview
In this device, the DC current gain is 160 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 50mA, 500mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.100MHz is present in the transition frequency.Maximum collector currents can be below 500mA volts.
BC807-25W,135 Features
the DC current gain for this device is 160 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC807-25W,135 Applications
There are a lot of Nexperia USA Inc.
BC807-25W,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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