BC807-25W,115
- Mfr.Part #
- BC807-25W,115
- Manufacturer
- Nexperia
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.5A SOT323
- Stock
- 29,937
- In Stock :
- 29,937
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- PNP
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Package / Case :
- SC-70, SOT-323
- Transition Frequency :
- 100MHz
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Published :
- 1999
- VCEsat-Max :
- 0.7 V
- Polarity/Channel Type :
- PNP
- Peak Reflow Temperature (Cel) :
- 260
- Factory Lead Time :
- 4 Weeks
- Max Breakdown Voltage :
- 45V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Saturation Voltage :
- 700mV
- Base Part Number :
- BC807
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 200mW
- Mount :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Collector Current :
- 500mA
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 200mW
- REACH SVHC :
- No SVHC
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 45V
- Emitter Base Voltage (VEBO) :
- 5V
- Length :
- 2.2mm
- Gain Bandwidth Product :
- 80MHz
- Collector Emitter Voltage (VCEO) :
- 45V
- Terminal Position :
- Dual
- Width :
- 1.35mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 1mm
- Series :
- Automotive, AEC-Q101
- Pin Count :
- 3
- Transistor Application :
- SWITCHING
- Collector Base Voltage (VCBO) :
- 50V
- Frequency :
- 80MHz
- Contact Plating :
- Tin
- Terminal Form :
- Gull wing
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 3
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C TJ
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- Datasheets
- BC807-25W,115

PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC807-25W,115 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 160 @ 100mA 1V DC current gain.As it features a collector emitter saturation voltage of 700mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 45V volts.When collector current reaches its maximum, it can reach 500mA volts.
BC807-25W,115 Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC807-25W,115 Applications
There are a lot of Nexperia USA Inc.
BC807-25W,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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