BC807-25LT3G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

hFE Min :

160

Polarity/Channel Type :

PNP

Max Power Dissipation :

225mW

Collector Base Voltage (VCBO) :

50V

Number of Elements :

1

Terminal Finish :

Tin (Sn)

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Transistor Application :

SWITCHING

Collector Emitter Breakdown Voltage :

45V

Current - Collector Cutoff (Max) :

100nA ICBO

Width :

1.3mm

Height :

940μm

Package / Case :

TO-236-3, SC-59, SOT-23-3

Halogen Free :

Halogen Free

Peak Reflow Temperature (Cel) :

260

Vce Saturation (Max) @ Ib, Ic :

700mV @ 50mA, 500mA

Emitter Base Voltage (VEBO) :

5V

Transition Frequency :

100MHz

Gain Bandwidth Product :

100MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

300mW

Time@Peak Reflow Temperature-Max (s) :

40

Number of Pins :

3

Collector Emitter Voltage (VCEO) :

45V

DC Current Gain (hFE) (Min) @ Ic, Vce :

160 @ 100mA 1V

Frequency :

100MHz

Surface Mount :

yes

Number of Terminations :

3

Base Part Number :

BC807

ECCN Code :

EAR99

Transistor Type :

PNP

Radiation Hardening :

No

Pin Count :

3

Element Configuration :

Single

Length :

2.9mm

Max Breakdown Voltage :

45V

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Factory Lead Time :

4 Weeks

Published :

2007

Collector Emitter Saturation Voltage :

-700mV

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Pbfree Code :

yes

Max Collector Current :

500mA