BC807-25LT3G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Factory Lead Time :

4 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Max Power Dissipation :

225mW

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

DC Current Gain (hFE) (Min) @ Ic, Vce :

160 @ 100mA 1V

Collector Emitter Saturation Voltage :

-700mV

Height :

940μm

Element Configuration :

Single

Length :

2.9mm

Number of Elements :

1

Pin Count :

3

Polarity/Channel Type :

PNP

ECCN Code :

EAR99

Number of Terminations :

3

Emitter Base Voltage (VEBO) :

5V

Number of Pins :

3

Max Breakdown Voltage :

45V

hFE Min :

160

Collector Base Voltage (VCBO) :

50V

Current - Collector Cutoff (Max) :

100nA ICBO

Collector Emitter Breakdown Voltage :

45V

Radiation Hardening :

No

JESD-609 Code :

e3

Vce Saturation (Max) @ Ib, Ic :

700mV @ 50mA, 500mA

Peak Reflow Temperature (Cel) :

260

Halogen Free :

Halogen Free

Pbfree Code :

yes

Width :

1.3mm

RoHS Status :

ROHS3 Compliant

Transistor Type :

PNP

Lead Free :

Lead Free

Package / Case :

TO-236-3, SC-59, SOT-23-3

Max Collector Current :

500mA

Terminal Finish :

Tin (Sn)

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

40

Frequency :

100MHz

Base Part Number :

BC807

Published :

2007

Packaging :

Tape and Reel (TR)

Gain Bandwidth Product :

100MHz

Collector Emitter Voltage (VCEO) :

45V

Surface Mount :

yes

Mounting Type :

Surface Mount

Transition Frequency :

100MHz

Power Dissipation :

300mW

Transistor Element Material :

SILICON

Terminal Form :

Gull wing