BC807-25LT1G
- Mfr.Part #
- BC807-25LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.5A SOT23-3
- Stock
- 33,387
- In Stock :
- 33,387
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- REACH SVHC :
- No SVHC
- Collector Emitter Voltage (VCEO) :
- 45V
- Number of Pins :
- 3
- Mounting Type :
- Surface Mount
- Collector Emitter Saturation Voltage :
- -700mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Packaging :
- Cut Tape (CT)
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 100MHz
- Power Dissipation :
- 300mW
- JESD-609 Code :
- e3
- Height :
- 940μm
- Pbfree Code :
- yes
- Halogen Free :
- Halogen Free
- Peak Reflow Temperature (Cel) :
- 260
- Width :
- 1.3mm
- Emitter Base Voltage (VEBO) :
- 5V
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Terminal Position :
- Dual
- Max Power Dissipation :
- 300mW
- Max Breakdown Voltage :
- 45V
- hFE Min :
- 160
- Contact Plating :
- Tin
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Factory Lead Time :
- 4 Weeks
- Collector Base Voltage (VCBO) :
- 50V
- Type :
- GENERAL PURPOSE
- Radiation Hardening :
- No
- Max Collector Current :
- 500mA
- Operating Temperature :
- -55°C~150°C TJ
- Surface Mount :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- Published :
- 2002
- Transition Frequency :
- 100MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Type :
- PNP
- Collector Emitter Breakdown Voltage :
- 45V
- Length :
- 2.9mm
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- BC807
- Frequency :
- 100MHz
- Datasheets
- BC807-25LT1G

PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
BC807-25LT1G Overview
In this device, the DC current gain is 160 @ 100mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -700mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 50mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 45V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
BC807-25LT1G Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC807-25LT1G Applications
There are a lot of ON Semiconductor
BC807-25LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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