BC807-25LT1
- Mfr.Part #
- BC807-25LT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 500MA SOT23
- Stock
- 15,975
- In Stock :
- 15,975
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency :
- 100MHz
- Pin Count :
- 3
- Gain Bandwidth Product :
- 100MHz
- Factory Lead Time :
- 4 Weeks
- Collector Emitter Breakdown Voltage :
- 45V
- Contact Plating :
- Tin
- Type :
- GENERAL PURPOSE
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Collector Base Voltage (VCBO) :
- 50V
- Halogen Free :
- Halogen Free
- REACH SVHC :
- No SVHC
- Terminal Position :
- Dual
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Length :
- 2.9mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- Base Part Number :
- BC807
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Width :
- 1.3mm
- Number of Pins :
- 3
- hFE Min :
- 160
- Surface Mount :
- yes
- Max Breakdown Voltage :
- 45V
- Pbfree Code :
- yes
- Transistor Type :
- PNP
- Packaging :
- Cut Tape (CT)
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 260
- Max Collector Current :
- 500mA
- Lead Free :
- Lead Free
- Published :
- 2002
- Transition Frequency :
- 100MHz
- Height :
- 940μm
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Collector Emitter Voltage (VCEO) :
- 45V
- Collector Emitter Saturation Voltage :
- -700mV
- Emitter Base Voltage (VEBO) :
- 5V
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Terminal Form :
- Gull wing
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 300mW
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Max Power Dissipation :
- 300mW
- Datasheets
- BC807-25LT1
BC807-25LT1 Documents

PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
BC807-25LT1G Overview
In this device, the DC current gain is 160 @ 100mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -700mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 50mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 45V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
BC807-25LT1G Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC807-25LT1G Applications
There are a lot of ON Semiconductor
BC807-25LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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