BC807-25E6327

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Mfr.Part #
BC807-25E6327
Manufacturer
Infineon Technologies
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS PNP 45V 0.5A SOT23-3
Stock
7,515
In Stock :
7,515

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - Bipolar (BJT) - Single
Base Part Number :
BC807
Frequency - Transition :
200MHz
Time@Peak Reflow Temperature-Max (s) :
40
Packaging :
Tape and Reel (TR)
Terminal Finish :
Matte Tin (Sn)
Transition Frequency :
200MHz
Number of Terminations :
3
Qualification Status :
Not Qualified
Reach Compliance Code :
Compliant
Number of Elements :
1
Transistor Type :
PNP
Terminal Form :
Gull wing
Surface Mount :
yes
RoHS Status :
RoHS Compliant
JESD-30 Code :
R-PDSO-G3
Operating Temperature :
150°C TJ
Transistor Element Material :
SILICON
JESD-609 Code :
e3
Mounting Type :
Surface Mount
Power - Max :
330mW
Package / Case :
TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Max) :
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce :
160 @ 100mA 1V
Configuration :
Single
Current - Collector Cutoff (Max) :
100nA ICBO
Voltage - Collector Emitter Breakdown (Max) :
45V
Published :
2007
Peak Reflow Temperature (Cel) :
260
ECCN Code :
EAR99
Power Dissipation-Max (Abs) :
0.33W
Terminal Position :
Dual
Polarity/Channel Type :
PNP
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vce Saturation (Max) @ Ib, Ic :
700mV @ 50mA, 500mA
Datasheets
BC807-25E6327
Introducing Transistors - Bipolar (BJT) - Single Infineon Technologies BC807-25E6327 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:BC807, Number of Terminations:3, Operating Temperature:150°C TJ, Mounting Type:Surface Mount, Package / Case:TO-236-3, SC-59, SOT-23-3, BC807-25E6327 pinout, BC807-25E6327 datasheet PDF, BC807-25E6327 amp .Beyond Transistors - Bipolar (BJT) - Single Infineon Technologies BC807-25E6327 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies BC807-25E6327


PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

BC 807-25 E6327 Overview


In this device, the DC current gain is 160 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 50mA, 500mA.200MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 45V.

BC 807-25 E6327 Features


the DC current gain for this device is 160 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
a transition frequency of 200MHz


BC 807-25 E6327 Applications


There are a lot of Infineon Technologies
BC 807-25 E6327 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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