BC807-16W135

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Voltage (VCEO) :

45V

Time@Peak Reflow Temperature-Max (s) :

40

VCEsat-Max :

0.7 V

Current - Collector Cutoff (Max) :

100nA ICBO

JESD-609 Code :

e3

Pin Count :

3

Base Part Number :

BC807

Peak Reflow Temperature (Cel) :

260

Published :

2009

Max Power Dissipation :

200mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 100mA 1V

Collector Emitter Breakdown Voltage :

45V

Transistor Type :

PNP

Terminal Position :

Dual

Gain Bandwidth Product :

80MHz

Number of Terminations :

3

Contact Plating :

Tin

Packaging :

Tape and Reel (TR)

Emitter Base Voltage (VEBO) :

5V

Collector Base Voltage (VCBO) :

50V

Factory Lead Time :

4 Weeks

Operating Temperature :

150°C TJ

Number of Pins :

3

Transition Frequency :

100MHz

Vce Saturation (Max) @ Ib, Ic :

700mV @ 50mA, 500mA

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Power Dissipation :

200mW

Terminal Form :

Gull wing

Element Configuration :

Single

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Series :

Automotive, AEC-Q101

Package / Case :

SC-70, SOT-323

Max Collector Current :

500mA

Mounting Type :

Surface Mount

Frequency :

80MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Polarity/Channel Type :

PNP