BC807-16LT1G

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Mfr.Part #
BC807-16LT1G
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS PNP 45V 0.5A SOT23-3
Stock
19,607
In Stock :
19,607

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Max Collector Current :
500mA
Number of Pins :
3
Lead Free :
Lead Free
Collector Emitter Saturation Voltage :
-700mV
Width :
1.3mm
RoHS Status :
ROHS3 Compliant
Mounting Type :
Surface Mount
Height :
940μm
Package / Case :
TO-236-3, SC-59, SOT-23-3
Time@Peak Reflow Temperature-Max (s) :
40
Collector Emitter Breakdown Voltage :
45V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transition Frequency :
100MHz
Contact Plating :
Tin
Terminal Position :
Dual
Pbfree Code :
yes
Type :
GENERAL PURPOSE
Power Dissipation :
300mW
Vce Saturation (Max) @ Ib, Ic :
700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) :
100nA ICBO
Transistor Element Material :
SILICON
Operating Temperature :
-55°C~150°C TJ
REACH SVHC :
No SVHC
Peak Reflow Temperature (Cel) :
260
JESD-609 Code :
e3
Factory Lead Time :
4 Weeks
Number of Elements :
1
Terminal Form :
Gull wing
ECCN Code :
EAR99
hFE Min :
100
Halogen Free :
Halogen Free
Gain Bandwidth Product :
100MHz
Collector Base Voltage (VCBO) :
50V
Max Power Dissipation :
300mW
Lifecycle Status :
ACTIVE (Last Updated: 6 days ago)
Emitter Base Voltage (VEBO) :
5V
Packaging :
Tape and Reel (TR)
Length :
2.9mm
Published :
2007
Collector Emitter Voltage (VCEO) :
45V
Frequency :
100MHz
Pin Count :
3
Element Configuration :
Single
Transistor Type :
PNP
Surface Mount :
yes
Base Part Number :
BC807
Max Breakdown Voltage :
45V
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 100mA 1V
Number of Terminations :
3
Transistor Application :
SWITCHING
Radiation Hardening :
No
Datasheets
BC807-16LT1G
Introducing Transistors - Bipolar (BJT) - Single onsemi BC807-16LT1G from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Mounting Type:Surface Mount, Package / Case:TO-236-3, SC-59, SOT-23-3, Type:GENERAL PURPOSE, Operating Temperature:-55°C~150°C TJ, Base Part Number:BC807, Number of Terminations:3, BC807-16LT1G pinout, BC807-16LT1G datasheet PDF, BC807-16LT1G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BC807-16LT1G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BC807-16LT1G


PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

BC807-16LT1G Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 100mA 1V DC current gain.As it features a collector emitter saturation voltage of -700mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 45V volts.When collector current reaches its maximum, it can reach 500mA volts.

BC807-16LT1G Features


the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz


BC807-16LT1G Applications


There are a lot of ON Semiconductor
BC807-16LT1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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