BC807-16LT1
- Mfr.Part #
- BC807-16LT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANSISTOR PNP 45V 500MA SOT-23
- Stock
- 2,075
- In Stock :
- 2,075
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 45V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency :
- 100MHz
- Max Power Dissipation :
- 300mW
- Base Part Number :
- BC807
- Height :
- 940μm
- Packaging :
- Tape and Reel (TR)
- Emitter Base Voltage (VEBO) :
- 5V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Emitter Saturation Voltage :
- -700mV
- Width :
- 1.3mm
- Collector Emitter Voltage (VCEO) :
- 45V
- Terminal Form :
- Gull wing
- Operating Temperature :
- -55°C~150°C TJ
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- Halogen Free :
- Halogen Free
- Peak Reflow Temperature (Cel) :
- 260
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- hFE Min :
- 100
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Collector Base Voltage (VCBO) :
- 50V
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Contact Plating :
- Tin
- Published :
- 2007
- Transistor Type :
- PNP
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Terminal Position :
- Dual
- Surface Mount :
- yes
- Type :
- GENERAL PURPOSE
- Number of Elements :
- 1
- Length :
- 2.9mm
- Gain Bandwidth Product :
- 100MHz
- Max Collector Current :
- 500mA
- Mounting Type :
- Surface Mount
- Max Breakdown Voltage :
- 45V
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 300mW
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Factory Lead Time :
- 4 Weeks
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Transition Frequency :
- 100MHz
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Datasheets
- BC807-16LT1

PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC807-16LT1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 100mA 1V DC current gain.As it features a collector emitter saturation voltage of -700mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 45V volts.When collector current reaches its maximum, it can reach 500mA volts.
BC807-16LT1G Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC807-16LT1G Applications
There are a lot of ON Semiconductor
BC807-16LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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