BC807-16
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- Mfr.Part #
- BC807-16
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.8A SOT23-3
- Stock
- 8,330
- In Stock ：
- 8,330
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 45V
- Voltage - Collector Emitter Breakdown (Max) :
- 45V
- Mount :
- Surface Mount
- Max Breakdown Voltage :
- 45V
- Max Collector Current :
- 500mA
- Polarity :
- PNP
- Radiation Hardening :
- No
- Gain Bandwidth Product :
- 100MHz
- Base Part Number :
- BC807
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Frequency :
- 100MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Frequency :
- 100MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Max Power Dissipation :
- 310mW
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 310mW
- Packaging :
- Tape and Reel (TR)
- Published :
- 2008
- Weight :
- 7.994566mg
- Height :
- 1mm
- Supplier Device Package :
- SOT-23-3
- Current - Collector Cutoff (Max) :
- 100nA
- Factory Lead Time :
- 19 Weeks
- Min Operating Temperature :
- -55°C
- Collector Emitter Saturation Voltage :
- -700mV
- REACH SVHC :
- No SVHC
- Lead Free :
- Lead Free
- Width :
- 1.4mm
- Element Configuration :
- Single
- Current - Collector (Ic) (Max) :
- 500mA
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- PNP
- Number of Pins :
- 3
- Frequency - Transition :
- 100MHz
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Contact Plating :
- Tin
- Max Operating Temperature :
- 150°C
- Collector Emitter Breakdown Voltage :
- 45V
- Emitter Base Voltage (VEBO) :
- 5V
- Operating Temperature :
- -55°C~150°C TJ
- Length :
- 3.05mm
- Power - Max :
- 310mW
- Number of Elements :
- 1
- Datasheets
- BC807-16
PNP -55°C~150°C TJ 100nA 1 Elements TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC807-16-7-F Overview
In this device, the DC current gain is 100 @ 100mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -700mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 50mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Input voltage breakdown is available at 45V volts.Product comes in the supplier's device package SOT-23-3.There is a 45V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
BC807-16-7-F Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the supplier device package of SOT-23-3
BC807-16-7-F Applications
There are a lot of Diodes Incorporated
BC807-16-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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