BC68PASX
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- Mfr.Part #
- BC68PASX
- Manufacturer
- NXP Semiconductors
- Package / Case
- 3-UDFN Exposed Pad
- Datasheet
- Download
- Description
- NEXPERIA BC68PAS - 20 V, 2 A NPN
- Stock
- 19,545
- In Stock ：
- 19,545
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 200mA, 2A
- Reference Standard :
- AEC-Q101; IEC-60134
- Configuration :
- Single
- JESD-30 Code :
- S-PDSO-N3
- Emitter Base Voltage (VEBO) :
- 5V
- Max Collector Current :
- 2A
- Mounting Type :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 32V
- Packaging :
- Cut Tape (CT)
- Terminal Form :
- NO LEAD
- Frequency - Transition :
- 170MHz
- Transistor Element Material :
- SILICON
- Case Connection :
- COLLECTOR
- Number of Terminations :
- 3
- Power - Max :
- 420mW
- Mount :
- Surface Mount
- Max Power Dissipation :
- 420mW
- Terminal Position :
- Dual
- Factory Lead Time :
- 16 Weeks
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Transistor Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 20V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 85 @ 500mA 1V
- Operating Temperature :
- 150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 170MHz
- Package / Case :
- 3-UDFN Exposed Pad
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Published :
- 2014
- Pin Count :
- 3
- Polarity/Channel Type :
- NPN
- Max Breakdown Voltage :
- 20V
- Contact Plating :
- Tin
- Collector Emitter Voltage (VCEO) :
- 600mV
- Number of Elements :
- 1
- Datasheets
- BC68PASX
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN 3-UDFN Exposed Pad Cut Tape (CT) Surface Mount
BC68PASX Overview
In this device, the DC current gain is 85 @ 500mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 200mA, 2A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.170MHz is present in the transition frequency.An input voltage of 20V volts is the breakdown voltage.Maximum collector currents can be below 2A volts.
BC68PASX Features
the DC current gain for this device is 85 @ 500mA 1V
the vce saturation(Max) is 600mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 170MHz
BC68PASX Applications
There are a lot of Nexperia USA Inc.
BC68PASX applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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