BC56PA,115
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- Mfr.Part #
- BC56PA,115
- Manufacturer
- Nexperia
- Package / Case
- 3-PowerUDFN
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A 3HUSON
- Stock
- 5
- In Stock ：
- 5
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 80V
- Case Connection :
- COLLECTOR
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 1.65W
- Transistor Type :
- NPN
- Max Breakdown Voltage :
- 80V
- Frequency :
- 180MHz
- Max Collector Current :
- 1A
- Radiation Hardening :
- No
- Collector Emitter Saturation Voltage :
- 500mV
- Package / Case :
- 3-PowerUDFN
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Contact Plating :
- Tin
- Polarity/Channel Type :
- NPN
- Gain Bandwidth Product :
- 180MHz
- Transistor Element Material :
- SILICON
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 8 Weeks
- Terminal Position :
- Dual
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Power - Max :
- 420mW
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Elements :
- 1
- Transition Frequency :
- 180MHz
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Published :
- 2011
- Power Dissipation :
- 1.65W
- Collector Emitter Breakdown Voltage :
- 80V
- hFE Min :
- 100
- Pin Count :
- 3
- Collector Base Voltage (VCBO) :
- 100V
- JESD-609 Code :
- e3
- Datasheets
- BC56PA,115
BC56PA,115 Documents
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN 3-PowerUDFN Tape & Reel (TR) Surface Mount
BC56PA,115 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 63 @ 150mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 500mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 180MHz.Single BJT transistor can take a breakdown input voltage of 80V volts.During maximum operation, collector current can be as low as 1A volts.
BC56PA,115 Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 180MHz
BC56PA,115 Applications
There are a lot of Nexperia USA Inc.
BC56PA,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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