BC560CTA
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- Mfr.Part #
- BC560CTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A TO92-3
- Stock
- 44,306
- In Stock ：
- 44,306
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- REACH SVHC :
- No SVHC
- Max Collector Current :
- 100mA
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Published :
- 2007
- Height :
- 5.33mm
- Transition Frequency :
- 150MHz
- Max Power Dissipation :
- 500mW
- JESD-609 Code :
- e3
- Power Dissipation :
- 500mW
- Emitter Base Voltage (VEBO) :
- -5V
- Gain Bandwidth Product :
- 150MHz
- Transistor Type :
- PNP
- hFE Min :
- 110
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency :
- 150MHz
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 45V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Factory Lead Time :
- 7 Weeks
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- -50V
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- ECCN Code :
- EAR99
- Operating Temperature :
- 150°C TJ
- Number of Elements :
- 1
- Weight :
- 240mg
- Collector Emitter Saturation Voltage :
- -250mV
- Packaging :
- Tape and Box (TB)
- Base Part Number :
- BC560
- Max Breakdown Voltage :
- 45V
- Length :
- 5.2mm
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- Terminal Position :
- BOTTOM
- Transistor Element Material :
- SILICON
- Mount :
- Through Hole
- Contact Plating :
- Tin
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- PNP
- Collector Emitter Breakdown Voltage :
- 45V
- Width :
- 4.19mm
- Datasheets
- BC560CTA
BC560CTA Documents
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC560CTA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 420 @ 2mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -250mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 650mV @ 5mA, 100mA.The emitter base voltage can be kept at -5V for high efficiency.The part has a transition frequency of 150MHz.The breakdown input voltage is 45V volts.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
BC560CTA Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
a transition frequency of 150MHz
BC560CTA Applications
There are a lot of ON Semiconductor
BC560CTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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