BC56-16PA-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Elements :

1

Published :

2016

Power - Max :

520mW

Number of Terminations :

3

Max Power Dissipation :

520mW

Collector Emitter Breakdown Voltage :

80V

Collector Emitter Voltage (VCEO) :

500mV

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Package / Case :

3-UDFN Exposed Pad

Polarity/Channel Type :

NPN

Current - Collector Cutoff (Max) :

100nA ICBO

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 2V

Factory Lead Time :

15 Weeks

Peak Reflow Temperature (Cel) :

260

Case Connection :

COLLECTOR

JESD-609 Code :

e3

ECCN Code :

EAR99

Operating Temperature :

-65°C~150°C TJ

Terminal Finish :

Matte Tin (Sn)

Additional Feature :

High Reliability

Configuration :

Single

Frequency - Transition :

125MHz

Terminal Form :

NO LEAD

Transistor Element Material :

SILICON

Transistor Type :

NPN

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Max Collector Current :

1A

Pbfree Code :

No

RoHS Status :

ROHS3 Compliant

Series :

Automotive, AEC-Q101

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

S-PDSO-N3

Transition Frequency :

125MHz

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Position :

Dual