BC56-16PA,115
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- Mfr.Part #
- BC56-16PA,115
- Manufacturer
- Nexperia
- Package / Case
- 3-PowerUDFN
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A 3HUSON
- Stock
- 8,450
- In Stock ：
- 8,450
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Contact Plating :
- Tin
- Max Breakdown Voltage :
- 80V
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 180MHz
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Operating Temperature :
- 150°C TJ
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Power Dissipation :
- 420mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- Radiation Hardening :
- No
- Case Connection :
- COLLECTOR
- Number of Pins :
- 3
- Package / Case :
- 3-PowerUDFN
- Factory Lead Time :
- 8 Weeks
- Terminal Position :
- Dual
- Number of Elements :
- 1
- Configuration :
- Single
- Power Dissipation :
- 1.65W
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Application :
- SWITCHING
- Collector Emitter Breakdown Voltage :
- 80V
- Frequency :
- 180MHz
- Polarity/Channel Type :
- NPN
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 80V
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Mount :
- Surface Mount
- Transistor Type :
- NPN
- Collector Base Voltage (VCBO) :
- 100V
- Max Collector Current :
- 1A
- Packaging :
- Tape and Reel (TR)
- Power - Max :
- 420mW
- Published :
- 2011
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Datasheets
- BC56-16PA,115
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN 3-PowerUDFN Tape & Reel (TR) Surface Mount
BC56-16PA,115 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 2V.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 180MHz.This device can take an input voltage of 80V volts before it breaks down.A maximum collector current of 1A volts can be achieved.
BC56-16PA,115 Features
the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 180MHz
BC56-16PA,115 Applications
There are a lot of Nexperia USA Inc.
BC56-16PA,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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