BC549BTF
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- Mfr.Part #
- BC549BTF
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.1A TO92-3
- Stock
- 1,828
- In Stock ：
- 1,828
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Breakdown Voltage :
- 30V
- Transition Frequency :
- 300MHz
- Polarity/Channel Type :
- NPN
- Terminal Position :
- BOTTOM
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Published :
- 2002
- Weight :
- 240mg
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Max Power Dissipation :
- 500mW
- ECCN Code :
- EAR99
- Transistor Type :
- NPN
- hFE Min :
- 110
- Emitter Base Voltage (VEBO) :
- 5V
- Power Dissipation :
- 500mW
- Collector Emitter Voltage (VCEO) :
- 30V
- Additional Feature :
- LOW NOISE
- Current Rating :
- 100mA
- Length :
- 4.58mm
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 30V
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 300MHz
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Element Configuration :
- Single
- Contact Plating :
- Tin
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- Collector Base Voltage (VCBO) :
- 30V
- Factory Lead Time :
- 2 Weeks
- Collector Emitter Saturation Voltage :
- 250mV
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Voltage - Rated DC :
- 30V
- Height :
- 4.58mm
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Width :
- 3.86mm
- Max Collector Current :
- 100mA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mount :
- Through Hole
- JESD-609 Code :
- e3
- Frequency :
- 300MHz
- Base Part Number :
- BC549
- Qualification Status :
- Not Qualified
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- 150°C TJ
- Datasheets
- BC549BTF
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
BC549BTF Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 2mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 250mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 300MHz.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 100mA volts.
BC549BTF Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 300MHz
BC549BTF Applications
There are a lot of ON Semiconductor
BC549BTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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