BC549BTF
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- Mfr.Part #
- BC549BTF
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.1A TO92-3
- Stock
- 1,828
- In Stock ：
- 1,828
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Power Dissipation :
- 500mW
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Collector Emitter Breakdown Voltage :
- 30V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Length :
- 4.58mm
- Terminal Position :
- BOTTOM
- Number of Pins :
- 3
- Base Part Number :
- BC549
- Number of Terminations :
- 3
- Collector Base Voltage (VCBO) :
- 30V
- Factory Lead Time :
- 2 Weeks
- Mounting Type :
- Through Hole
- Polarity/Channel Type :
- NPN
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Max Power Dissipation :
- 500mW
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- NPN
- Height :
- 4.58mm
- Qualification Status :
- Not Qualified
- hFE Min :
- 110
- Collector Emitter Voltage (VCEO) :
- 30V
- Max Collector Current :
- 100mA
- Max Breakdown Voltage :
- 30V
- Frequency :
- 300MHz
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Width :
- 3.86mm
- Transition Frequency :
- 300MHz
- Lead Free :
- Lead Free
- Collector Emitter Saturation Voltage :
- 250mV
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Weight :
- 240mg
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Mount :
- Through Hole
- Additional Feature :
- LOW NOISE
- Voltage - Rated DC :
- 30V
- Published :
- 2002
- Current Rating :
- 100mA
- Emitter Base Voltage (VEBO) :
- 5V
- Contact Plating :
- Tin
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 300MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- BC549BTF
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
BC549BTF Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 2mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 250mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 300MHz.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 100mA volts.
BC549BTF Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 300MHz
BC549BTF Applications
There are a lot of ON Semiconductor
BC549BTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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