BC549BTA
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- Mfr.Part #
- BC549BTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.1A TO92-3
- Stock
- 1,334
- In Stock ：
- 1,334
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Number of Terminations :
- 3
- Terminal Position :
- BOTTOM
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 7 Weeks
- Voltage - Rated DC :
- 30V
- Pbfree Code :
- yes
- Qualification Status :
- Not Qualified
- Base Part Number :
- BC549
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Max Breakdown Voltage :
- 30V
- Published :
- 2002
- Polarity/Channel Type :
- NPN
- Transition Frequency :
- 300MHz
- Power Dissipation :
- 500mW
- Number of Pins :
- 3
- Mount :
- Through Hole
- Transistor Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 5V
- Operating Temperature :
- 150°C TJ
- Gain Bandwidth Product :
- 300MHz
- Packaging :
- Tape and Box (TB)
- RoHS Status :
- ROHS3 Compliant
- Frequency :
- 300MHz
- hFE Min :
- 110
- Collector Emitter Breakdown Voltage :
- 30V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Additional Feature :
- LOW NOISE
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 500mW
- ECCN Code :
- EAR99
- REACH SVHC :
- No SVHC
- Contact Plating :
- Tin
- Collector Emitter Voltage (VCEO) :
- 30V
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- Width :
- 3.86mm
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Current Rating :
- 100mA
- Weight :
- 240mg
- Collector Base Voltage (VCBO) :
- 30V
- Height :
- 4.58mm
- Max Collector Current :
- 100mA
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Length :
- 4.58mm
- Collector Emitter Saturation Voltage :
- 250mV
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Datasheets
- BC549BTA
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC549BTA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 2mA 5V DC current gain.As it features a collector emitter saturation voltage of 250mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 300MHz in the part.Single BJT transistor can be broken down at a voltage of 30V volts.When collector current reaches its maximum, it can reach 100mA volts.
BC549BTA Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 300MHz
BC549BTA Applications
There are a lot of ON Semiconductor
BC549BTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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