BC548CZL1G
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- Mfr.Part #
- BC548CZL1G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.1A TO92
- Stock
- 35,976
- In Stock ：
- 35,976
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- BC548
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~150°C TJ
- Current Rating :
- 100mA
- Peak Reflow Temperature (Cel) :
- 260
- Element Configuration :
- Single
- Number of Pins :
- 3
- Max Power Dissipation :
- 625mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Transistor Application :
- AMPLIFIER
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Terminal Position :
- BOTTOM
- Max Collector Current :
- 100mA
- Collector Emitter Breakdown Voltage :
- 30V
- Collector Base Voltage (VCBO) :
- 30V
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 15nA
- Packaging :
- Tape and Box (TB)
- Collector Emitter Voltage (VCEO) :
- 250mV
- Published :
- 2004
- HTS Code :
- 8541.21.00.75
- Polarity/Channel Type :
- NPN
- Mounting Type :
- Through Hole
- Collector Emitter Saturation Voltage :
- 300mV
- Emitter Base Voltage (VEBO) :
- 6V
- Pin Count :
- 3
- JESD-609 Code :
- e1
- Gain Bandwidth Product :
- 300MHz
- Number of Terminations :
- 3
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- hFE Min :
- 420
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 300MHz
- Surface Mount :
- No
- RoHS Status :
- RoHS Compliant
- Qualification Status :
- Not Qualified
- Voltage - Rated DC :
- 30V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- ECCN Code :
- EAR99
- Additional Feature :
- EUROPEAN PART NUMBER
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 500µA, 10mA
- Datasheets
- BC548CZL1G
NPN -55°C~150°C TJ 15nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC548CZL1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 420 @ 2mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 300mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 500μA, 10mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 300MHz.During maximum operation, collector current can be as low as 100mA volts.
BC548CZL1G Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 250mV @ 500μA, 10mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 300MHz
BC548CZL1G Applications
There are a lot of ON Semiconductor
BC548CZL1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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