BC547BBU
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- Mfr.Part #
- BC547BBU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A TO92-3
- Stock
- 5,546
- In Stock ：
- 5,546
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- 150°C TJ
- Collector Base Voltage (VCBO) :
- 50V
- Gain Bandwidth Product :
- 300MHz
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Width :
- 3.86mm
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Number of Pins :
- 3
- Current Rating :
- 100mA
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 500mW
- Pbfree Code :
- yes
- Collector Emitter Breakdown Voltage :
- 45V
- Weight :
- 179mg
- Height :
- 4.58mm
- Mount :
- Through Hole
- Published :
- 2002
- Transistor Application :
- SWITCHING
- Frequency :
- 300MHz
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Contact Plating :
- Tin
- Qualification Status :
- Not Qualified
- Transition Frequency :
- 300MHz
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 45V
- Length :
- 4.58mm
- Max Power Dissipation :
- 500mW
- REACH SVHC :
- No SVHC
- Base Part Number :
- BC547
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Packaging :
- Bulk
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Number of Elements :
- 1
- Polarity/Channel Type :
- NPN
- Max Collector Current :
- 100mA
- Lead Free :
- Lead Free
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Emitter Base Voltage (VEBO) :
- 6V
- Mounting Type :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- hFE Min :
- 110
- Number of Terminations :
- 3
- Factory Lead Time :
- 7 Weeks
- Collector Emitter Saturation Voltage :
- 250mV
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Terminal Position :
- BOTTOM
- Voltage - Rated DC :
- 45V
- Datasheets
- BC547BBU
,TO-226_straightlead.jpg)
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
BC547BBU Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 2mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 250mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 300MHz.During maximum operation, collector current can be as low as 100mA volts.
BC547BBU Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 300MHz
BC547BBU Applications
There are a lot of ON Semiconductor
BC547BBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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