BC546CTA
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- Mfr.Part #
- BC546CTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 65V 0.1A TO92-3
- Stock
- 1,892
- In Stock ：
- 1,892
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 300MHz
- hFE Min :
- 110
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Power Dissipation :
- 500mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Weight :
- 240mg
- Factory Lead Time :
- 6 Weeks
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 250mV
- Frequency :
- 300MHz
- Transistor Application :
- SWITCHING
- Operating Temperature :
- 150°C TJ
- Published :
- 2002
- Emitter Base Voltage (VEBO) :
- 6V
- Terminal Position :
- BOTTOM
- Voltage - Rated DC :
- 65V
- Max Collector Current :
- 100mA
- Polarity/Channel Type :
- NPN
- Length :
- 4.58mm
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Gain Bandwidth Product :
- 300MHz
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Number of Terminations :
- 3
- Height :
- 4.58mm
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Contact Plating :
- Tin
- Radiation Hardening :
- No
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Collector Emitter Voltage (VCEO) :
- 65V
- Width :
- 3.86mm
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 500mW
- Max Breakdown Voltage :
- 65V
- Packaging :
- Tape and Box (TB)
- Collector Base Voltage (VCBO) :
- 80V
- Transistor Type :
- NPN
- Number of Elements :
- 1
- Current Rating :
- 100mA
- Base Part Number :
- BC546
- Mount :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 65V
- Datasheets
- BC546CTA
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC546CTA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 420 @ 2mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 250mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 5mA, 100mA.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 100mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 300MHz.The breakdown input voltage is 65V volts.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
BC546CTA Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 300MHz
BC546CTA Applications
There are a lot of ON Semiconductor
BC546CTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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