BC546CTA
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- Mfr.Part #
- BC546CTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 65V 0.1A TO92-3
- Stock
- 1,892
- In Stock ：
- 1,892
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- 65V
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Length :
- 4.58mm
- ECCN Code :
- EAR99
- Weight :
- 240mg
- Contact Plating :
- Tin
- Height :
- 4.58mm
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- hFE Min :
- 110
- Number of Pins :
- 3
- Max Collector Current :
- 100mA
- Mount :
- Through Hole
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Box (TB)
- Transistor Type :
- NPN
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Power Dissipation :
- 500mW
- Width :
- 3.86mm
- Current Rating :
- 100mA
- Polarity/Channel Type :
- NPN
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Max Breakdown Voltage :
- 65V
- Base Part Number :
- BC546
- Pbfree Code :
- yes
- Operating Temperature :
- 150°C TJ
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Emitter Base Voltage (VEBO) :
- 6V
- Max Power Dissipation :
- 500mW
- Mounting Type :
- Through Hole
- Collector Emitter Saturation Voltage :
- 250mV
- Frequency :
- 300MHz
- JESD-609 Code :
- e3
- Terminal Position :
- BOTTOM
- Published :
- 2002
- Factory Lead Time :
- 6 Weeks
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Collector Emitter Voltage (VCEO) :
- 65V
- Collector Base Voltage (VCBO) :
- 80V
- Collector Emitter Breakdown Voltage :
- 65V
- Gain Bandwidth Product :
- 300MHz
- Transition Frequency :
- 300MHz
- Datasheets
- BC546CTA
BC546CTA Documents
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC546CTA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 420 @ 2mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 250mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 5mA, 100mA.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 100mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 300MHz.The breakdown input voltage is 65V volts.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
BC546CTA Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 300MHz
BC546CTA Applications
There are a lot of ON Semiconductor
BC546CTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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