BC546BZL1
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- Mfr.Part #
- BC546BZL1
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 65V 0.1A TO92
- Stock
- 11,815
- In Stock ：
- 11,815
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 625mW
- Collector Emitter Breakdown Voltage :
- 65V
- Pin Count :
- 3
- JESD-609 Code :
- e0
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 500µA, 10mA
- Collector Emitter Voltage (VCEO) :
- 250mV
- Peak Reflow Temperature (Cel) :
- 235
- Emitter Base Voltage (VEBO) :
- 6V
- Current - Collector Cutoff (Max) :
- 15nA
- Terminal Position :
- BOTTOM
- Max Collector Current :
- 100mA
- Collector Base Voltage (VCBO) :
- 80V
- Polarity/Channel Type :
- NPN
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Gain Bandwidth Product :
- 300MHz
- Packaging :
- Tape and Box (TB)
- Number of Terminations :
- 3
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- HTS Code :
- 8541.21.00.75
- Transition Frequency :
- 300MHz
- Additional Feature :
- EUROPEAN PART NUMBER
- Base Part Number :
- BC546
- Qualification Status :
- Not Qualified
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Transistor Type :
- NPN
- Element Configuration :
- Single
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Application :
- AMPLIFIER
- Number of Pins :
- 3
- hFE Min :
- 200
- Collector Emitter Saturation Voltage :
- 300mV
- Current Rating :
- 100mA
- RoHS Status :
- Non-RoHS Compliant
- Published :
- 2005
- Mount :
- Through Hole
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- 65V
- Lead Free :
- Contains Lead
- Reach Compliance Code :
- not_compliant
- Datasheets
- BC546BZL1
BC546BZL1 Documents
NPN -55°C~150°C TJ 15nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC546BZL1 Overview
In this device, the DC current gain is 200 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 300mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 250mV @ 500μA, 10mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (100mA).300MHz is present in the transition frequency.Maximum collector currents can be below 100mA volts.
BC546BZL1 Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 250mV @ 500μA, 10mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 300MHz
BC546BZL1 Applications
There are a lot of ON Semiconductor
BC546BZL1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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