BC546BZL1
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- Mfr.Part #
- BC546BZL1
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 65V 0.1A TO92
- Stock
- 11,815
- In Stock ：
- 11,815
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Gain Bandwidth Product :
- 300MHz
- Collector Base Voltage (VCBO) :
- 80V
- Qualification Status :
- Not Qualified
- Transition Frequency :
- 300MHz
- Collector Emitter Breakdown Voltage :
- 65V
- Current Rating :
- 100mA
- Collector Emitter Saturation Voltage :
- 300mV
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Max Collector Current :
- 100mA
- Lead Free :
- Contains Lead
- Max Power Dissipation :
- 625mW
- Voltage - Rated DC :
- 65V
- Operating Temperature :
- -55°C~150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 500µA, 10mA
- Peak Reflow Temperature (Cel) :
- 235
- Mounting Type :
- Through Hole
- Reach Compliance Code :
- not_compliant
- Terminal Position :
- BOTTOM
- RoHS Status :
- Non-RoHS Compliant
- Published :
- 2005
- Transistor Type :
- NPN
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- JESD-609 Code :
- e0
- Base Part Number :
- BC546
- Mount :
- Through Hole
- Element Configuration :
- Single
- hFE Min :
- 200
- Polarity/Channel Type :
- NPN
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Transistor Application :
- AMPLIFIER
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- HTS Code :
- 8541.21.00.75
- Packaging :
- Tape and Box (TB)
- Current - Collector Cutoff (Max) :
- 15nA
- Collector Emitter Voltage (VCEO) :
- 250mV
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Additional Feature :
- EUROPEAN PART NUMBER
- Emitter Base Voltage (VEBO) :
- 6V
- Datasheets
- BC546BZL1
NPN -55°C~150°C TJ 15nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC546BZL1 Overview
In this device, the DC current gain is 200 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 300mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 250mV @ 500μA, 10mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (100mA).300MHz is present in the transition frequency.Maximum collector currents can be below 100mA volts.
BC546BZL1 Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 250mV @ 500μA, 10mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 300MHz
BC546BZL1 Applications
There are a lot of ON Semiconductor
BC546BZL1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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