BC546BZL1
- Mfr.Part #
- BC546BZL1
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 65V 0.1A TO92
- Stock
- 11,815
- In Stock :
- 11,815
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 625mW
- Collector Base Voltage (VCBO) :
- 80V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Pin Count :
- 3
- Reach Compliance Code :
- not_compliant
- Base Part Number :
- BC546
- Published :
- 2005
- Gain Bandwidth Product :
- 300MHz
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 65V
- Element Configuration :
- Single
- Current Rating :
- 100mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Qualification Status :
- Not Qualified
- Collector Emitter Saturation Voltage :
- 300mV
- Polarity/Channel Type :
- NPN
- JESD-609 Code :
- e0
- Transition Frequency :
- 300MHz
- Voltage - Rated DC :
- 65V
- Max Collector Current :
- 100mA
- Current - Collector Cutoff (Max) :
- 15nA
- hFE Min :
- 200
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Terminal Position :
- BOTTOM
- Transistor Application :
- AMPLIFIER
- Number of Terminations :
- 3
- RoHS Status :
- Non-RoHS Compliant
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Contains Lead
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 235
- Collector Emitter Voltage (VCEO) :
- 250mV
- Transistor Type :
- NPN
- Packaging :
- Tape and Box (TB)
- Mount :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 500µA, 10mA
- HTS Code :
- 8541.21.00.75
- Mounting Type :
- Through Hole
- Additional Feature :
- EUROPEAN PART NUMBER
- Emitter Base Voltage (VEBO) :
- 6V
- Datasheets
- BC546BZL1
BC546BZL1 Documents

NPN -55°C~150°C TJ 15nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC546BZL1 Overview
In this device, the DC current gain is 200 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 300mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 250mV @ 500μA, 10mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (100mA).300MHz is present in the transition frequency.Maximum collector currents can be below 100mA volts.
BC546BZL1 Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 250mV @ 500μA, 10mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 300MHz
BC546BZL1 Applications
There are a lot of ON Semiconductor
BC546BZL1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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