BC546BTF
- Mfr.Part #
- BC546BTF
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 65V 0.1A TO92-3
- Stock
- 23,972
- In Stock :
- 23,972
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current Rating :
- 100mA
- REACH SVHC :
- No SVHC
- Length :
- 4.58mm
- Gain Bandwidth Product :
- 300MHz
- Frequency :
- 300MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 100mA
- Polarity/Channel Type :
- NPN
- Lead Free :
- Lead Free
- Factory Lead Time :
- 6 Weeks
- Width :
- 3.86mm
- Qualification Status :
- Not Qualified
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- JESD-609 Code :
- e3
- Transition Frequency :
- 300MHz
- Emitter Base Voltage (VEBO) :
- 6V
- Number of Elements :
- 1
- Weight :
- 240mg
- Collector Base Voltage (VCBO) :
- 80V
- Height :
- 4.58mm
- Collector Emitter Breakdown Voltage :
- 65V
- Terminal Position :
- BOTTOM
- Power Dissipation :
- 500mW
- hFE Min :
- 110
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 500mW
- Additional Feature :
- LOW NOISE
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Pbfree Code :
- yes
- Base Part Number :
- BC546
- Max Breakdown Voltage :
- 65V
- Transistor Type :
- NPN
- Mount :
- Through Hole
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Through Hole
- Collector Emitter Saturation Voltage :
- 250mV
- Published :
- 2002
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Voltage - Rated DC :
- 65V
- Collector Emitter Voltage (VCEO) :
- 65V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Contact Plating :
- Tin
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- Datasheets
- BC546BTF
BC546BTF Documents

NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
BC546BTF Overview
In this device, the DC current gain is 200 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 250mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 5mA, 100mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (100mA).300MHz is present in the transition frequency.An input voltage of 65V volts is the breakdown voltage.Maximum collector currents can be below 100mA volts.
BC546BTF Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 300MHz
BC546BTF Applications
There are a lot of ON Semiconductor
BC546BTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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