BC546BTF
- Mfr.Part #
- BC546BTF
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 65V 0.1A TO92-3
- Stock
- 23,972
- In Stock :
- 23,972
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Through Hole
- Transition Frequency :
- 300MHz
- Max Breakdown Voltage :
- 65V
- REACH SVHC :
- No SVHC
- Collector Emitter Breakdown Voltage :
- 65V
- Qualification Status :
- Not Qualified
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Operating Temperature :
- 150°C TJ
- ECCN Code :
- EAR99
- Published :
- 2002
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Current Rating :
- 100mA
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Frequency :
- 300MHz
- Base Part Number :
- BC546
- Polarity/Channel Type :
- NPN
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Height :
- 4.58mm
- Weight :
- 240mg
- Gain Bandwidth Product :
- 300MHz
- Mounting Type :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Factory Lead Time :
- 6 Weeks
- Length :
- 4.58mm
- Voltage - Rated DC :
- 65V
- Transistor Type :
- NPN
- Power Dissipation :
- 500mW
- Terminal Position :
- BOTTOM
- hFE Min :
- 110
- Collector Emitter Voltage (VCEO) :
- 65V
- Width :
- 3.86mm
- Contact Plating :
- Tin
- Collector Base Voltage (VCBO) :
- 80V
- Collector Emitter Saturation Voltage :
- 250mV
- Emitter Base Voltage (VEBO) :
- 6V
- Max Collector Current :
- 100mA
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 500mW
- Additional Feature :
- LOW NOISE
- Datasheets
- BC546BTF

NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
BC546BTF Overview
In this device, the DC current gain is 200 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 250mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 5mA, 100mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (100mA).300MHz is present in the transition frequency.An input voltage of 65V volts is the breakdown voltage.Maximum collector currents can be below 100mA volts.
BC546BTF Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 300MHz
BC546BTF Applications
There are a lot of ON Semiconductor
BC546BTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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