BC546BTA
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- Mfr.Part #
- BC546BTA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 65V 0.1A TO92-3
- Stock
- 3,175
- In Stock ：
- 3,175
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 65V
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 80V
- hFE Min :
- 110
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- 150°C TJ
- Width :
- 3.86mm
- Frequency :
- 300MHz
- Pbfree Code :
- yes
- Current Rating :
- 100mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Base Part Number :
- BC546
- Mount :
- Through Hole
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Length :
- 4.58mm
- Element Configuration :
- Single
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Emitter Base Voltage (VEBO) :
- 6V
- Gain Bandwidth Product :
- 300MHz
- Collector Emitter Breakdown Voltage :
- 65V
- Number of Terminations :
- 3
- Height :
- 4.58mm
- Mounting Type :
- Through Hole
- Max Power Dissipation :
- 500mW
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Transistor Type :
- NPN
- Transistor Application :
- SWITCHING
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Radiation Hardening :
- No
- Max Collector Current :
- 100mA
- Current :
- 100mA
- JESD-609 Code :
- e3
- Power Dissipation :
- 500mW
- Factory Lead Time :
- 6 Weeks
- REACH SVHC :
- No SVHC
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Voltage :
- 65V
- Voltage - Rated DC :
- 65V
- Contact Plating :
- Tin
- Terminal Position :
- BOTTOM
- Published :
- 2007
- Max Breakdown Voltage :
- 65V
- Weight :
- 240.007063mg
- Packaging :
- Tape and Box (TB)
- Collector Emitter Saturation Voltage :
- 250mV
- Transition Frequency :
- 300MHz
- Datasheets
- BC546BTA
BC546BTA Documents
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC546BTA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 2mA 5V.With a collector emitter saturation voltage of 250mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 100mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 100mA.A transition frequency of 300MHz is present in the part.There is a breakdown input voltage of 65V volts that it can take.Collector current can be as low as 100mA volts at its maximum.
BC546BTA Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 300MHz
BC546BTA Applications
There are a lot of ON Semiconductor
BC546BTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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