BC546BBU

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Mfr.Part #
BC546BBU
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
TRANS NPN 65V 0.1A TO92-3
Stock
33,894
In Stock :
33,894

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Type :
NPN
Packaging :
Bulk
Vce Saturation (Max) @ Ib, Ic :
600mV @ 5mA, 100mA
RoHS Status :
RoHS Compliant
Power Dissipation :
500mW
Mount :
Through Hole
Current Rating :
100mA
Collector Emitter Voltage (VCEO) :
65V
Weight :
178.2mg
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Max Collector Current :
100mA
Collector Emitter Saturation Voltage :
250mV
Mounting Type :
Through Hole
Published :
2002
Emitter Base Voltage (VEBO) :
6V
Collector Emitter Breakdown Voltage :
65V
Lead Free :
Lead Free
Voltage - Rated DC :
65V
hFE Min :
110
Max Power Dissipation :
500mW
Base Part Number :
BC546
Current - Collector Cutoff (Max) :
15nA ICBO
Number of Elements :
1
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 2mA 5V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Base Voltage (VCBO) :
80V
Frequency :
300MHz
Number of Pins :
3
Operating Temperature :
150°C TJ
Element Configuration :
Single
Gain Bandwidth Product :
300MHz
Datasheets
BC546BBU
Introducing Transistors - Bipolar (BJT) - Single onsemi BC546BBU from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-226-3, TO-92-3 (TO-226AA), Mounting Type:Through Hole, Base Part Number:BC546, Number of Pins:3, Operating Temperature:150°C TJ, BC546BBU pinout, BC546BBU datasheet PDF, BC546BBU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BC546BBU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BC546BBU


NPN 150°C TJ 15nA ICBO 1 Elements TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole

BC546BBU Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 2mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 250mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.During maximum operation, collector current can be as low as 100mA volts.

BC546BBU Features


the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA


BC546BBU Applications


There are a lot of ON Semiconductor
BC546BBU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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