BC53-10PA,115

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Mfr.Part #
BC53-10PA,115
Manufacturer
NXP Semiconductors
Package / Case
3-PowerUDFN
Datasheet
Download
Description
NOW NEXPERIA BC53-10PA - SMALL S
Stock
36,000
In Stock :
36,000

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Manufacturer :
NXP Semiconductors
Product Category :
Transistors - Bipolar (BJT) - Single
JESD-609 Code :
e3
Frequency :
145MHz
Transition Frequency :
145MHz
Contact Plating :
Tin
Polarity/Channel Type :
PNP
Max Breakdown Voltage :
80V
Published :
2011
Transistor Application :
SWITCHING
Current - Collector Cutoff (Max) :
100nA ICBO
Emitter Base Voltage (VEBO) :
5V
Max Power Dissipation :
420mW
Transistor Type :
PNP
Power - Max :
420mW
Pin Count :
3
Collector Emitter Voltage (VCEO) :
80V
Collector Base Voltage (VCBO) :
100V
Vce Saturation (Max) @ Ib, Ic :
500mV @ 50mA, 500mA
Mounting Type :
Surface Mount
Number of Elements :
1
Configuration :
Single
Number of Terminations :
3
Number of Pins :
3
Packaging :
Tape and Reel (TR)
Max Collector Current :
1A
DC Current Gain (hFE) (Min) @ Ic, Vce :
63 @ 150mA 2V
Mount :
Surface Mount
Power Dissipation :
1.65W
Terminal Position :
Dual
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
3-PowerUDFN
RoHS Status :
ROHS3 Compliant
Factory Lead Time :
8 Weeks
Case Connection :
COLLECTOR
Transistor Element Material :
SILICON
Collector Emitter Breakdown Voltage :
80V
Terminal Form :
NO LEAD
Operating Temperature :
150°C TJ
Datasheets
BC53-10PA,115
Introducing Transistors - Bipolar (BJT) - Single NXP Semiconductors BC53-10PA,115 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Terminations:3, Number of Pins:3, Package / Case:3-PowerUDFN, Operating Temperature:150°C TJ, BC53-10PA,115 pinout, BC53-10PA,115 datasheet PDF, BC53-10PA,115 amp .Beyond Transistors - Bipolar (BJT) - Single NXP Semiconductors BC53-10PA,115 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

NXP Semiconductors BC53-10PA,115


PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP 3-PowerUDFN Tape & Reel (TR) Surface Mount

BC53-10PA,115 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 63 @ 150mA 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 145MHz is present in the part.There is a breakdown input voltage of 80V volts that it can take.Collector current can be as low as 1A volts at its maximum.

BC53-10PA,115 Features


the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 145MHz


BC53-10PA,115 Applications


There are a lot of Nexperia USA Inc.
BC53-10PA,115 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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