BC449G
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- Mfr.Part #
- BC449G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 100V 0.3A TO92
- Stock
- 3,579
- In Stock ：
- 3,579
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Rated DC :
- 100V
- Collector Base Voltage (VCBO) :
- 100V
- Max Power Dissipation :
- 625mW
- Terminal Position :
- BOTTOM
- Lifecycle Status :
- OBSOLETE (Last Updated: 21 hours ago)
- Collector Emitter Voltage (VCEO) :
- 250mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Bulk
- Collector Emitter Breakdown Voltage :
- 100V
- Current Rating :
- 300mA
- Pin Count :
- 3
- Qualification Status :
- Not Qualified
- Max Collector Current :
- 300mA
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Polarity/Channel Type :
- NPN
- Base Part Number :
- BC449
- Mounting Type :
- Through Hole
- RoHS Status :
- RoHS Compliant
- Number of Terminations :
- 3
- HTS Code :
- 8541.21.00.75
- Emitter Base Voltage (VEBO) :
- 5V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Operating Temperature :
- -55°C~150°C TJ
- Gain Bandwidth Product :
- 200MHz
- Collector Emitter Saturation Voltage :
- 125mV
- Number of Pins :
- 3
- hFE Min :
- 50
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Type :
- NPN
- Number of Elements :
- 1
- Transition Frequency :
- 200MHz
- Pbfree Code :
- yes
- JESD-609 Code :
- e1
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 260
- Mount :
- Through Hole
- Published :
- 2005
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 2mA 5V
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Datasheets
- BC449G
,TO-226_straightlead.jpg)
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
BC449G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 50 @ 2mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 125mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 10mA, 100mA.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 300mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 200MHz.Single BJT transistor is possible to have a collector current as low as 300mA volts at Single BJT transistors maximum.
BC449G Features
the DC current gain for this device is 50 @ 2mA 5V
a collector emitter saturation voltage of 125mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 300mA
a transition frequency of 200MHz
BC449G Applications
There are a lot of ON Semiconductor
BC449G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| BC447 | onsemi | 27,746 | TRANS NPN 80V 0.3A TO92 |
| BC447G | onsemi | 3,571 | TRANS NPN 80V 0.3A TO92 |
| BC449 | onsemi | 33,630 | TRANS NPN 100V 0.3A TO92 |
| BC449A | onsemi | 44,380 | TRANS NPN 100V 0.3A TO92 |
| BC449AG | onsemi | 7,148 | TRANS NPN 100V 0.3A TO92 |
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