BC368ZL1
- Mfr.Part #
- BC368ZL1
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 20V 1A TO92
- Stock
- 43,388
- In Stock :
- 43,388
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Collector Emitter Saturation Voltage :
- 500mV
- Peak Reflow Temperature (Cel) :
- 240
- hFE Min :
- 50
- Voltage - Rated DC :
- 20V
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Voltage (VCEO) :
- 20V
- Transition Frequency :
- 65MHz
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Current Rating :
- 1A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Base Part Number :
- BC368
- Transistor Element Material :
- SILICON
- Transistor Application :
- AMPLIFIER
- Emitter Base Voltage (VEBO) :
- 5V
- Max Power Dissipation :
- 625mW
- Number of Pins :
- 3
- RoHS Status :
- Non-RoHS Compliant
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 25V
- JESD-609 Code :
- e0
- Additional Feature :
- EUROPEAN PART NUMBER
- Mount :
- Through Hole
- Frequency - Transition :
- 65MHz
- Mounting Type :
- Through Hole
- Gain Bandwidth Product :
- 56MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 85 @ 500mA 1V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Number of Terminations :
- 3
- Lead Free :
- Contains Lead
- Polarity :
- PNP
- ECCN Code :
- EAR99
- Transistor Type :
- NPN
- Published :
- 2005
- HTS Code :
- 8541.21.00.95
- Collector Emitter Breakdown Voltage :
- 20V
- Number of Elements :
- 1
- Packaging :
- Tape and Box (TB)
- Terminal Position :
- BOTTOM
- Max Collector Current :
- 1A
- Datasheets
- BC368ZL1

NPN -55°C~150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC368ZL1 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 85 @ 500mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 500mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 65MHz.During maximum operation, collector current can be as low as 1A volts.
BC368ZL1 Features
the DC current gain for this device is 85 @ 500mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 65MHz
BC368ZL1 Applications
There are a lot of ON Semiconductor
BC368ZL1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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