BC368ZL1
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- Mfr.Part #
- BC368ZL1
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 20V 1A TO92
- Stock
- 43,388
- In Stock ：
- 43,388
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 65MHz
- hFE Min :
- 50
- Current Rating :
- 1A
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Element Configuration :
- Single
- RoHS Status :
- Non-RoHS Compliant
- Lead Free :
- Contains Lead
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 20V
- Mount :
- Through Hole
- Emitter Base Voltage (VEBO) :
- 5V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 85 @ 500mA 1V
- JESD-609 Code :
- e0
- Collector Emitter Saturation Voltage :
- 500mV
- Pin Count :
- 3
- Number of Terminations :
- 3
- Frequency - Transition :
- 65MHz
- Gain Bandwidth Product :
- 56MHz
- Base Part Number :
- BC368
- Published :
- 2005
- Polarity :
- PNP
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 240
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Voltage - Rated DC :
- 20V
- Mounting Type :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 20V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Packaging :
- Tape and Box (TB)
- Collector Base Voltage (VCBO) :
- 25V
- Transistor Application :
- AMPLIFIER
- HTS Code :
- 8541.21.00.95
- Max Power Dissipation :
- 625mW
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Type :
- NPN
- Terminal Position :
- BOTTOM
- Additional Feature :
- EUROPEAN PART NUMBER
- Max Collector Current :
- 1A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Datasheets
- BC368ZL1
BC368ZL1 Documents
NPN -55°C~150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC368ZL1 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 85 @ 500mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 500mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 65MHz.During maximum operation, collector current can be as low as 1A volts.
BC368ZL1 Features
the DC current gain for this device is 85 @ 500mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 65MHz
BC368ZL1 Applications
There are a lot of ON Semiconductor
BC368ZL1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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