BC338-25
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- Mfr.Part #
- BC338-25
- Manufacturer
- Diotec Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 25V 0.8A TO92
- Stock
- 25,818
- In Stock ：
- 25,818
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- Manufacturer :
- Diotec Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 25V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Gain Bandwidth Product :
- 100MHz
- Factory Lead Time :
- 2 Weeks
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pbfree Code :
- yes
- Length :
- 4.58mm
- Operating Temperature :
- 150°C TJ
- Number of Pins :
- 3
- Terminal Position :
- BOTTOM
- Qualification Status :
- Not Qualified
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 625mW
- Width :
- 3.86mm
- Voltage - Rated DC :
- 25V
- Weight :
- 240mg
- Packaging :
- Tape and Box (TB)
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 10V
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 625mW
- Collector Emitter Saturation Voltage :
- 700mV
- Transistor Application :
- SWITCHING
- Frequency :
- 100MHz
- Height :
- 4.58mm
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Collector Emitter Voltage (VCEO) :
- 25V
- Element Configuration :
- Single
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 100nA
- Contact Plating :
- Tin
- Emitter Base Voltage (VEBO) :
- 5V
- Max Collector Current :
- 800mA
- Number of Elements :
- 1
- Polarity/Channel Type :
- NPN
- Current Rating :
- 800mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- JESD-609 Code :
- e3
- Mount :
- Through Hole
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Base Part Number :
- BC338
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- hFE Min :
- 100
- Max Breakdown Voltage :
- 25V
- Published :
- 2002
- Transition Frequency :
- 100MHz
- Datasheets
- BC338-25
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC33825TA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 160 @ 100mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 700mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 800mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 25V volts.During maximum operation, collector current can be as low as 800mA volts.
BC33825TA Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 800mA
a transition frequency of 100MHz
BC33825TA Applications
There are a lot of ON Semiconductor
BC33825TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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