BC337-25,112
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- Mfr.Part #
- BC337-25,112
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.5A TO92
- Stock
- 15,858
- In Stock ：
- 15,858
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- BOTTOM
- Voltage - Collector Emitter Breakdown (Max) :
- 45V
- Transition Frequency :
- 100MHz
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Qualification Status :
- Not Qualified
- Terminal Finish :
- Matte Tin (Sn)
- Configuration :
- Single
- Transistor Type :
- NPN
- JESD-609 Code :
- e3
- Surface Mount :
- No
- Peak Reflow Temperature (Cel) :
- 250
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Packaging :
- Bulk
- VCEsat-Max :
- 0.7 V
- Terminal Form :
- Wire
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- 150°C TJ
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Number of Elements :
- 1
- Number of Terminations :
- 3
- JESD-30 Code :
- O-PBCY-W3
- Reach Compliance Code :
- Unknown
- Power Dissipation-Max (Abs) :
- 0.625W
- Transistor Application :
- SWITCHING
- Base Part Number :
- BC337
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- Power - Max :
- 625mW
- Current - Collector (Ic) (Max) :
- 500mA
- Transistor Element Material :
- SILICON
- Frequency - Transition :
- 100MHz
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Published :
- 2009
- Datasheets
- BC337-25,112
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
BC337-25,112 Overview
In this device, the DC current gain is 160 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 50mA, 500mA.100MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 45V.
BC337-25,112 Features
the DC current gain for this device is 160 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
a transition frequency of 100MHz
BC337-25,112 Applications
There are a lot of NXP USA Inc.
BC337-25,112 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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