BC337-25,112
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- Mfr.Part #
- BC337-25,112
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.5A TO92
- Stock
- 15,858
- In Stock ：
- 15,858
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- Peak Reflow Temperature (Cel) :
- 250
- Power - Max :
- 625mW
- Transistor Application :
- SWITCHING
- Terminal Position :
- BOTTOM
- Transition Frequency :
- 100MHz
- Polarity/Channel Type :
- NPN
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Form :
- Wire
- Reach Compliance Code :
- Unknown
- Qualification Status :
- Not Qualified
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Number of Terminations :
- 3
- Terminal Finish :
- Matte Tin (Sn)
- Base Part Number :
- BC337
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Transistor Type :
- NPN
- Packaging :
- Bulk
- Configuration :
- Single
- Voltage - Collector Emitter Breakdown (Max) :
- 45V
- Pin Count :
- 3
- Current - Collector (Ic) (Max) :
- 500mA
- Frequency - Transition :
- 100MHz
- Operating Temperature :
- 150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2009
- Power Dissipation-Max (Abs) :
- 0.625W
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- VCEsat-Max :
- 0.7 V
- JESD-30 Code :
- O-PBCY-W3
- Surface Mount :
- No
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- BC337-25,112
BC337-25,112 Documents
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
BC337-25,112 Overview
In this device, the DC current gain is 160 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 50mA, 500mA.100MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 45V.
BC337-25,112 Features
the DC current gain for this device is 160 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
a transition frequency of 100MHz
BC337-25,112 Applications
There are a lot of NXP USA Inc.
BC337-25,112 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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