BC337-16-B0 B1G
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- Mfr.Part #
- BC337-16-B0 B1G
- Manufacturer
- Taiwan Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.8A TO92
- Stock
- 15,647
- In Stock ：
- 15,647
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- Manufacturer :
- Taiwan Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Series :
- -
- Voltage - Collector Emitter Breakdown (Max) :
- 45 V
- Current - Collector (Ic) (Max) :
- 800 mA
- Mounting Type :
- Through Hole
- Frequency - Transition :
- 100MHz
- Power - Max :
- 625 mW
- Transistor Type :
- NPN
- Package :
- Bulk
- Product Status :
- Obsolete
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100mA, 5V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package :
- TO-92
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- Datasheets
- BC337-16-B0 B1G
NPN -55°C ~ 150°C (TJ) 100nA (ICBO) TO-226-3, TO-92-3 (TO-226AA) Through Hole
BC337-16-B0 B1G Overview
In this device, the DC current gain is 250 @ 100mA, 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 50mA, 500mA.Supplier device package TO-92 comes with the product.The device exhibits a collector-emitter breakdown at 45 V.
BC337-16-B0 B1G Features
the DC current gain for this device is 250 @ 100mA, 5V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the supplier device package of TO-92
BC337-16-B0 B1G Applications
There are a lot of Taiwan Semiconductor
BC337-16-B0 B1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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