BC337-16-B0 A1G
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- Mfr.Part #
- BC337-16-B0 A1G
- Manufacturer
- Taiwan Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.8A TO92
- Stock
- 49,300
- In Stock ：
- 49,300
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- Manufacturer :
- Taiwan Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power - Max :
- 625 mW
- Supplier Device Package :
- TO-92
- Package :
- Tape and Box (TB)
- Current - Collector (Ic) (Max) :
- 800 mA
- Series :
- -
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100mA, 5V
- Mounting Type :
- Through Hole
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Product Status :
- Obsolete
- Voltage - Collector Emitter Breakdown (Max) :
- 45 V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Frequency - Transition :
- 100MHz
- Datasheets
- BC337-16-B0 A1G
NPN -55°C ~ 150°C (TJ) 100nA (ICBO) TO-226-3, TO-92-3 (TO-226AA) Formed Leads Through Hole
BC337-16-B0 A1G Overview
In this device, the DC current gain is 250 @ 100mA, 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 50mA, 500mA.Product comes in the supplier's device package TO-92.There is a 45 V maximal voltage in the device due to collector-emitter breakdown.
BC337-16-B0 A1G Features
the DC current gain for this device is 250 @ 100mA, 5V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the supplier device package of TO-92
BC337-16-B0 A1G Applications
There are a lot of Taiwan Semiconductor
BC337-16-B0 A1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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