BC327RL1G
- Mfr.Part #
- BC327RL1G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.8A TO92
- Stock
- 40,397
- In Stock :
- 40,397
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 800mA
- JESD-609 Code :
- e1
- ECCN Code :
- EAR99
- Current Rating :
- -800mA
- Packaging :
- Tape and Reel (TR)
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- -45V
- Power Dissipation :
- 1.5W
- Current - Collector Cutoff (Max) :
- 100nA
- Mounting Type :
- Through Hole
- Power - Max :
- 625mW
- Additional Feature :
- EUROPEAN PART NUMBER
- Surface Mount :
- No
- Transistor Application :
- AMPLIFIER
- Base Part Number :
- BC327
- Number of Terminations :
- 3
- hFE Min :
- 100
- Collector Base Voltage (VCBO) :
- -50V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Max Power Dissipation :
- 625mW
- Transistor Type :
- PNP
- Lead Free :
- Lead Free
- Polarity/Channel Type :
- PNP
- Collector Emitter Saturation Voltage :
- -700mV
- Number of Pins :
- 3
- Gain Bandwidth Product :
- 260MHz
- Terminal Position :
- BOTTOM
- Collector Emitter Voltage (VCEO) :
- 700mV
- Time@Peak Reflow Temperature-Max (s) :
- 40
- RoHS Status :
- RoHS Compliant
- Pin Count :
- 3
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Qualification Status :
- Not Qualified
- Published :
- 2009
- Collector Emitter Breakdown Voltage :
- 45V
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Frequency :
- 260MHz
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Transition Frequency :
- 260MHz
- Datasheets
- BC327RL1G

PNP -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
BC327RL1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -700mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -800mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 260MHz.During maximum operation, collector current can be as low as 800mA volts.
BC327RL1G Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -800mA
a transition frequency of 260MHz
BC327RL1G Applications
There are a lot of ON Semiconductor
BC327RL1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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