BC327RL1G
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- Mfr.Part #
- BC327RL1G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.8A TO92
- Stock
- 40,397
- In Stock ：
- 40,397
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- AMPLIFIER
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Position :
- BOTTOM
- Power Dissipation :
- 1.5W
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- Base Part Number :
- BC327
- Power - Max :
- 625mW
- Current - Collector Cutoff (Max) :
- 100nA
- Polarity/Channel Type :
- PNP
- Surface Mount :
- No
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 800mA
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 700mV
- Element Configuration :
- Single
- Voltage - Rated DC :
- -45V
- hFE Min :
- 100
- Pin Count :
- 3
- Packaging :
- Tape and Reel (TR)
- Gain Bandwidth Product :
- 260MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 45V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Published :
- 2009
- Max Power Dissipation :
- 625mW
- Peak Reflow Temperature (Cel) :
- 260
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- RoHS Status :
- RoHS Compliant
- Frequency :
- 260MHz
- Qualification Status :
- Not Qualified
- Current Rating :
- -800mA
- Collector Emitter Saturation Voltage :
- -700mV
- ECCN Code :
- EAR99
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Transition Frequency :
- 260MHz
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Collector Base Voltage (VCBO) :
- -50V
- Additional Feature :
- EUROPEAN PART NUMBER
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- JESD-609 Code :
- e1
- Datasheets
- BC327RL1G
BC327RL1G Documents
PNP -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
BC327RL1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -700mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -800mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 260MHz.During maximum operation, collector current can be as low as 800mA volts.
BC327RL1G Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -800mA
a transition frequency of 260MHz
BC327RL1G Applications
There are a lot of ON Semiconductor
BC327RL1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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