BC32740TA
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- Mfr.Part #
- BC32740TA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.8A TO92-3
- Stock
- 2,870
- In Stock ：
- 2,870
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Rated DC :
- -45V
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Terminal Position :
- BOTTOM
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Max Breakdown Voltage :
- 45V
- Published :
- 2007
- Factory Lead Time :
- 6 Weeks
- Collector Emitter Voltage (VCEO) :
- 45V
- Length :
- 5.2mm
- Emitter Base Voltage (VEBO) :
- -5V
- Lead Free :
- Lead Free
- Power Dissipation :
- 625mW
- Packaging :
- Tape and Box (TB)
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Polarity/Channel Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Weight :
- 240mg
- Mounting Type :
- Through Hole
- Operating Temperature :
- 150°C TJ
- Gain Bandwidth Product :
- 100MHz
- Current Rating :
- -800mA
- ECCN Code :
- EAR99
- hFE Min :
- 100
- Height :
- 5.33mm
- Number of Terminations :
- 3
- Width :
- 4.19mm
- Collector Emitter Breakdown Voltage :
- 45V
- Max Collector Current :
- 800mA
- Frequency :
- 100MHz
- Max Power Dissipation :
- 625mW
- Contact Plating :
- Tin
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100mA 1V
- Pbfree Code :
- yes
- REACH SVHC :
- No SVHC
- Transition Frequency :
- 100MHz
- Current - Collector Cutoff (Max) :
- 100nA
- Collector Emitter Saturation Voltage :
- -700mV
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Transistor Type :
- PNP
- Transistor Application :
- SWITCHING
- Base Part Number :
- BC327
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Mount :
- Through Hole
- Number of Elements :
- 1
- Datasheets
- BC32740TA
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC32740TA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 250 @ 100mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -700mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Its current rating is -800mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 45V volts.During maximum operation, collector current can be as low as 800mA volts.
BC32740TA Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -800mA
a transition frequency of 100MHz
BC32740TA Applications
There are a lot of ON Semiconductor
BC32740TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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