BC32740TA
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- Mfr.Part #
- BC32740TA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.8A TO92-3
- Stock
- 2,870
- In Stock ：
- 2,870
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Length :
- 5.2mm
- Radiation Hardening :
- No
- Polarity/Channel Type :
- PNP
- Max Breakdown Voltage :
- 45V
- Weight :
- 240mg
- Transistor Type :
- PNP
- Collector Emitter Saturation Voltage :
- -700mV
- hFE Min :
- 100
- Contact Plating :
- Tin
- Current - Collector Cutoff (Max) :
- 100nA
- JESD-609 Code :
- e3
- Gain Bandwidth Product :
- 100MHz
- ECCN Code :
- EAR99
- Packaging :
- Tape and Box (TB)
- Width :
- 4.19mm
- Terminal Position :
- BOTTOM
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Current Rating :
- -800mA
- REACH SVHC :
- No SVHC
- Frequency :
- 100MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 45V
- Voltage - Rated DC :
- -45V
- Number of Pins :
- 3
- Factory Lead Time :
- 6 Weeks
- Max Collector Current :
- 800mA
- Lead Free :
- Lead Free
- Height :
- 5.33mm
- Published :
- 2007
- Element Configuration :
- Single
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Max Power Dissipation :
- 625mW
- Operating Temperature :
- 150°C TJ
- Transition Frequency :
- 100MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100mA 1V
- Mount :
- Through Hole
- Power Dissipation :
- 625mW
- Base Part Number :
- BC327
- Transistor Application :
- SWITCHING
- Emitter Base Voltage (VEBO) :
- -5V
- Collector Emitter Voltage (VCEO) :
- 45V
- Datasheets
- BC32740TA
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC32740TA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 250 @ 100mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -700mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Its current rating is -800mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 45V volts.During maximum operation, collector current can be as low as 800mA volts.
BC32740TA Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -800mA
a transition frequency of 100MHz
BC32740TA Applications
There are a lot of ON Semiconductor
BC32740TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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