BC32740TA
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- Mfr.Part #
- BC32740TA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.8A TO92-3
- Stock
- 2,870
- In Stock ：
- 2,870
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 45V
- Number of Elements :
- 1
- Power Dissipation :
- 625mW
- Base Part Number :
- BC327
- Current - Collector Cutoff (Max) :
- 100nA
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 100MHz
- Width :
- 4.19mm
- Max Collector Current :
- 800mA
- hFE Min :
- 100
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100mA 1V
- Mount :
- Through Hole
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Collector Emitter Saturation Voltage :
- -700mV
- Max Power Dissipation :
- 625mW
- Terminal Position :
- BOTTOM
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- 150°C TJ
- REACH SVHC :
- No SVHC
- Emitter Base Voltage (VEBO) :
- -5V
- Current Rating :
- -800mA
- Voltage - Rated DC :
- -45V
- Weight :
- 240mg
- Collector Emitter Breakdown Voltage :
- 45V
- Contact Plating :
- Tin
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Radiation Hardening :
- No
- Mounting Type :
- Through Hole
- Length :
- 5.2mm
- Packaging :
- Tape and Box (TB)
- Height :
- 5.33mm
- Max Breakdown Voltage :
- 45V
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- PNP
- Transistor Type :
- PNP
- Frequency :
- 100MHz
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 6 Weeks
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Published :
- 2007
- Gain Bandwidth Product :
- 100MHz
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Number of Terminations :
- 3
- Datasheets
- BC32740TA
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC32740TA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 250 @ 100mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -700mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Its current rating is -800mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 45V volts.During maximum operation, collector current can be as low as 800mA volts.
BC32740TA Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -800mA
a transition frequency of 100MHz
BC32740TA Applications
There are a lot of ON Semiconductor
BC32740TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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