BC32740BU
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- Mfr.Part #
- BC32740BU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.8A TO92-3
- Stock
- 5,790
- In Stock ：
- 5,790
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- REACH SVHC :
- No SVHC
- hFE Min :
- 100
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100mA 1V
- JESD-609 Code :
- e3
- Base Part Number :
- BC327
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Transistor Type :
- PNP
- Weight :
- 179mg
- Frequency :
- 100MHz
- Element Configuration :
- Single
- Factory Lead Time :
- 7 Weeks
- Contact Plating :
- Tin
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 45V
- Voltage - Rated DC :
- -45V
- Max Power Dissipation :
- 625mW
- Collector Emitter Saturation Voltage :
- -700mV
- Collector Emitter Voltage (VCEO) :
- 45V
- Gain Bandwidth Product :
- 100MHz
- Transition Frequency :
- 100MHz
- Mounting Type :
- Through Hole
- Height :
- 4.58mm
- Max Breakdown Voltage :
- 60V
- Length :
- 4.58mm
- Polarity/Channel Type :
- PNP
- Published :
- 2007
- Width :
- 3.86mm
- Packaging :
- Bulk
- Number of Elements :
- 1
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Power Dissipation :
- 625mW
- Radiation Hardening :
- No
- Mount :
- Through Hole
- Transistor Application :
- SWITCHING
- Terminal Position :
- BOTTOM
- Current - Collector Cutoff (Max) :
- 100nA
- Emitter Base Voltage (VEBO) :
- -5V
- Transistor Element Material :
- SILICON
- Operating Temperature :
- 150°C TJ
- Max Collector Current :
- 800mA
- Collector Base Voltage (VCBO) :
- 50V
- ECCN Code :
- EAR99
- Current Rating :
- -800mA
- Datasheets
- BC32740BU
,TO-226_straightlead.jpg)
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
BC32740BU Overview
This device has a DC current gain of 250 @ 100mA 1V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -700mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at -5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -800mA.In this part, there is a transition frequency of 100MHz.As a result, it can handle voltages as low as 60V volts.The maximum collector current is 800mA volts.
BC32740BU Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -800mA
a transition frequency of 100MHz
BC32740BU Applications
There are a lot of ON Semiconductor
BC32740BU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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