BC32725TA
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- Mfr.Part #
- BC32725TA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.8A TO92-3
- Stock
- 531
- In Stock ：
- 531
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Length :
- 5.2mm
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Max Collector Current :
- 800mA
- Transistor Type :
- PNP
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Gain Bandwidth Product :
- 100MHz
- Frequency :
- 100MHz
- Current :
- 500mA
- Collector Emitter Saturation Voltage :
- -700mV
- Contact Plating :
- Tin
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Operating Temperature :
- 150°C TJ
- REACH SVHC :
- No SVHC
- Mounting Type :
- Through Hole
- Packaging :
- Tape and Box (TB)
- Collector Emitter Voltage (VCEO) :
- 45V
- Transition Frequency :
- 100MHz
- Pbfree Code :
- yes
- Base Part Number :
- BC327
- Current - Collector Cutoff (Max) :
- 100nA
- Published :
- 2007
- Height :
- 5.33mm
- Factory Lead Time :
- 6 Weeks
- Emitter Base Voltage (VEBO) :
- 5V
- Power Dissipation :
- 625mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 625mW
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Weight :
- 240.007063mg
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Current Rating :
- -800mA
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Width :
- 4.19mm
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- Max Breakdown Voltage :
- 45V
- Collector Emitter Breakdown Voltage :
- -45V
- Terminal Position :
- BOTTOM
- Polarity/Channel Type :
- PNP
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Voltage - Rated DC :
- -50V
- Mount :
- Through Hole
- hFE Min :
- 100
- Datasheets
- BC32725TA
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC32725TA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 160 @ 100mA 1V.With a collector emitter saturation voltage of -700mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 700mV @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -800mA.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 45V volts that it can take.Collector current can be as low as 800mA volts at its maximum.
BC32725TA Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -800mA
a transition frequency of 100MHz
BC32725TA Applications
There are a lot of ON Semiconductor
BC32725TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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