BC32725TA
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- Mfr.Part #
- BC32725TA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.8A TO92-3
- Stock
- 531
- In Stock ：
- 531
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 5V
- Max Collector Current :
- 800mA
- Transistor Element Material :
- SILICON
- Weight :
- 240.007063mg
- Radiation Hardening :
- No
- Height :
- 5.33mm
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Transition Frequency :
- 100MHz
- Packaging :
- Tape and Box (TB)
- REACH SVHC :
- No SVHC
- Contact Plating :
- Tin
- Gain Bandwidth Product :
- 100MHz
- Factory Lead Time :
- 6 Weeks
- Terminal Position :
- BOTTOM
- Collector Emitter Saturation Voltage :
- -700mV
- Length :
- 5.2mm
- Base Part Number :
- BC327
- Collector Emitter Breakdown Voltage :
- -45V
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 100nA
- Published :
- 2007
- Width :
- 4.19mm
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Current :
- 500mA
- Frequency :
- 100MHz
- Voltage - Rated DC :
- -50V
- Max Power Dissipation :
- 625mW
- Number of Pins :
- 3
- Max Breakdown Voltage :
- 45V
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Transistor Type :
- PNP
- Operating Temperature :
- 150°C TJ
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Mount :
- Through Hole
- Current Rating :
- -800mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- PNP
- Power Dissipation :
- 625mW
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Collector Emitter Voltage (VCEO) :
- 45V
- hFE Min :
- 100
- Datasheets
- BC32725TA
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC32725TA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 160 @ 100mA 1V.With a collector emitter saturation voltage of -700mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 700mV @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -800mA.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 45V volts that it can take.Collector current can be as low as 800mA volts at its maximum.
BC32725TA Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -800mA
a transition frequency of 100MHz
BC32725TA Applications
There are a lot of ON Semiconductor
BC32725TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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