BC32725BU
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- Mfr.Part #
- BC32725BU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.8A TO92-3
- Stock
- 1,304
- In Stock ：
- 1,304
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- hFE Min :
- 40
- Mount :
- Through Hole
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Height :
- 5.33mm
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Power Dissipation :
- 1.5W
- Max Junction Temperature (Tj) :
- 150°C
- Emitter Base Voltage (VEBO) :
- -5V
- Current - Collector (Ic) (Max) :
- 800mA
- Max Breakdown Voltage :
- 45V
- Current - Collector Cutoff (Max) :
- 100nA
- Published :
- 2007
- Base Part Number :
- BC327
- Frequency :
- 100MHz
- Packaging :
- Bulk
- Polarity/Channel Type :
- PNP
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Transition Frequency :
- 100MHz
- Terminal Position :
- BOTTOM
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- -45V
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Saturation Voltage :
- -700mV
- Radiation Hardening :
- No
- Factory Lead Time :
- 7 Weeks
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- -45V
- Transistor Application :
- SWITCHING
- Gain Bandwidth Product :
- 260MHz
- Voltage - Rated DC :
- -45V
- Number of Elements :
- 1
- Max Collector Current :
- -800mA
- Mounting Type :
- Through Hole
- Transistor Type :
- PNP
- Weight :
- 179mg
- Contact Plating :
- Tin
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- REACH SVHC :
- No SVHC
- Current Rating :
- -800mA
- Operating Temperature :
- 150°C TJ
- Max Power Dissipation :
- 625mW
- Datasheets
- BC32725BU
,TO-226_straightlead.jpg)
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
BC32725BU Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 160 @ 100mA 1V DC current gain.As it features a collector emitter saturation voltage of -700mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at -5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 45V volts.When collector current reaches its maximum, it can reach -800mA volts.
BC32725BU Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -800mA
a transition frequency of 100MHz
BC32725BU Applications
There are a lot of ON Semiconductor
BC32725BU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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