BC327-040
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- Mfr.Part #
- BC327-040
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.8A TO92
- Stock
- 13,556
- In Stock ：
- 13,556
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Peak Reflow Temperature (Cel) :
- 240
- Packaging :
- Bulk
- JESD-30 Code :
- O-PBCY-T3
- Current Rating :
- -800mA
- Max Power Dissipation :
- 625mW
- Gain Bandwidth Product :
- 260MHz
- RoHS Status :
- Non-RoHS Compliant
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- JESD-609 Code :
- e0
- Published :
- 2002
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Polarity/Channel Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 700mV
- Element Configuration :
- Single
- Mount :
- Through Hole
- Reach Compliance Code :
- not_compliant
- Transistor Application :
- AMPLIFIER
- Voltage - Rated DC :
- -45V
- Transition Frequency :
- 260MHz
- Qualification Status :
- Not Qualified
- Current - Collector Cutoff (Max) :
- 100nA
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- hFE Min :
- 250
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Base Voltage (VCBO) :
- -50V
- ECCN Code :
- EAR99
- Lead Free :
- Contains Lead
- Terminal Position :
- BOTTOM
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Collector Emitter Saturation Voltage :
- -700mV
- HTS Code :
- 8541.21.00.75
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100mA 1V
- Base Part Number :
- BC327
- Max Collector Current :
- 800mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Collector Emitter Breakdown Voltage :
- 45V
- Transistor Type :
- PNP
- Current - Collector (Ic) (Max) :
- 800mA
- Pin Count :
- 3
- Datasheets
- BC327-040
BC327-040 Documents
,TO-226_straightlead.jpg)
PNP -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
BC327-040 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 250 @ 100mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -700mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -800mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 260MHz.During maximum operation, collector current can be as low as 800mA volts.
BC327-040 Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -800mA
a transition frequency of 260MHz
BC327-040 Applications
There are a lot of ON Semiconductor
BC327-040 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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