BC327-040
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- Mfr.Part #
- BC327-040
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.8A TO92
- Stock
- 13,556
- In Stock ：
- 13,556
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- AMPLIFIER
- Collector Emitter Voltage (VCEO) :
- 700mV
- Polarity/Channel Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Element Configuration :
- Single
- Published :
- 2002
- HTS Code :
- 8541.21.00.75
- JESD-30 Code :
- O-PBCY-T3
- Number of Terminations :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Current - Collector Cutoff (Max) :
- 100nA
- hFE Min :
- 250
- Transition Frequency :
- 260MHz
- Collector Emitter Breakdown Voltage :
- 45V
- Collector Base Voltage (VCBO) :
- -50V
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 240
- Terminal Position :
- BOTTOM
- Reach Compliance Code :
- not_compliant
- Transistor Type :
- PNP
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Emitter Base Voltage (VEBO) :
- 5V
- Max Power Dissipation :
- 625mW
- Current Rating :
- -800mA
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- -700mV
- Voltage - Rated DC :
- -45V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100mA 1V
- Max Collector Current :
- 800mA
- Base Part Number :
- BC327
- Packaging :
- Bulk
- Lead Free :
- Contains Lead
- Current - Collector (Ic) (Max) :
- 800mA
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 260MHz
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Qualification Status :
- Not Qualified
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Pin Count :
- 3
- JESD-609 Code :
- e0
- RoHS Status :
- Non-RoHS Compliant
- Datasheets
- BC327-040
BC327-040 Documents
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PNP -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
BC327-040 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 250 @ 100mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -700mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -800mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 260MHz.During maximum operation, collector current can be as low as 800mA volts.
BC327-040 Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -800mA
a transition frequency of 260MHz
BC327-040 Applications
There are a lot of ON Semiconductor
BC327-040 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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