BC327-040
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- Mfr.Part #
- BC327-040
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.8A TO92
- Stock
- 13,556
- In Stock ：
- 13,556
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e0
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Qualification Status :
- Not Qualified
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- hFE Min :
- 250
- Collector Emitter Breakdown Voltage :
- 45V
- Base Part Number :
- BC327
- Mount :
- Through Hole
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 100nA
- Emitter Base Voltage (VEBO) :
- 5V
- Operating Temperature :
- -55°C~150°C TJ
- Reach Compliance Code :
- not_compliant
- Max Collector Current :
- 800mA
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Max Power Dissipation :
- 625mW
- Voltage - Rated DC :
- -45V
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- -50V
- Transition Frequency :
- 260MHz
- Published :
- 2002
- Collector Emitter Saturation Voltage :
- -700mV
- Current - Collector (Ic) (Max) :
- 800mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100mA 1V
- RoHS Status :
- Non-RoHS Compliant
- JESD-30 Code :
- O-PBCY-T3
- Peak Reflow Temperature (Cel) :
- 240
- HTS Code :
- 8541.21.00.75
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Lead Free :
- Contains Lead
- Current Rating :
- -800mA
- Terminal Position :
- BOTTOM
- Transistor Type :
- PNP
- Mounting Type :
- Through Hole
- Transistor Application :
- AMPLIFIER
- Gain Bandwidth Product :
- 260MHz
- Packaging :
- Bulk
- Polarity/Channel Type :
- PNP
- Pin Count :
- 3
- Collector Emitter Voltage (VCEO) :
- 700mV
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- BC327-040
,TO-226_straightlead.jpg)
PNP -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
BC327-040 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 250 @ 100mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -700mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -800mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 260MHz.During maximum operation, collector current can be as low as 800mA volts.
BC327-040 Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -800mA
a transition frequency of 260MHz
BC327-040 Applications
There are a lot of ON Semiconductor
BC327-040 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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