BC327-025
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- Mfr.Part #
- BC327-025
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.8A TO92
- Stock
- 39,738
- In Stock ：
- 39,738
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- -50V
- Published :
- 2006
- Emitter Base Voltage (VEBO) :
- 5V
- Lead Free :
- Contains Lead
- Qualification Status :
- Not Qualified
- Transition Frequency :
- 260MHz
- Transistor Application :
- AMPLIFIER
- Pbfree Code :
- yes
- Terminal Position :
- BOTTOM
- Max Power Dissipation :
- 625mW
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e1
- Mount :
- Through Hole
- Number of Elements :
- 1
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Saturation Voltage :
- -700mV
- Gain Bandwidth Product :
- 260MHz
- Current Rating :
- -800mA
- JESD-30 Code :
- O-PBCY-T3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- Pin Count :
- 3
- RoHS Status :
- Non-RoHS Compliant
- Max Collector Current :
- 800mA
- Polarity/Channel Type :
- PNP
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Current - Collector (Ic) (Max) :
- 800mA
- Collector Emitter Breakdown Voltage :
- 45V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Base Part Number :
- BC327
- Transistor Type :
- PNP
- hFE Min :
- 160
- Voltage - Rated DC :
- -45V
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- HTS Code :
- 8541.21.00.75
- Collector Emitter Voltage (VCEO) :
- 700mV
- Packaging :
- Bulk
- Operating Temperature :
- -55°C~150°C TJ
- Current - Collector Cutoff (Max) :
- 100nA
- Datasheets
- BC327-025
BC327-025 Documents
,TO-226_straightlead.jpg)
PNP -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
BC327-025 Overview
This device has a DC current gain of 160 @ 100mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -700mV.A VCE saturation (Max) of 700mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of -800mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 260MHz.A maximum collector current of 800mA volts is possible.
BC327-025 Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -800mA
a transition frequency of 260MHz
BC327-025 Applications
There are a lot of ON Semiconductor
BC327-025 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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