BC239C
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- Mfr.Part #
- BC239C
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 25V 0.1A TO92
- Stock
- 6,318
- In Stock ：
- 6,318
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Pin Count :
- 3
- Gain Bandwidth Product :
- 280MHz
- Collector Base Voltage (VCBO) :
- 30V
- Max Power Dissipation :
- 350mW
- RoHS Status :
- RoHS Compliant
- Collector Emitter Voltage (VCEO) :
- 600mV
- HTS Code :
- 8541.21.00.75
- Element Configuration :
- Single
- Number of Elements :
- 1
- Max Collector Current :
- 100mA
- Peak Reflow Temperature (Cel) :
- 260
- Mounting Type :
- Through Hole
- Polarity/Channel Type :
- NPN
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Transistor Application :
- AMPLIFIER
- Current Rating :
- 100mA
- JESD-609 Code :
- e1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 380 @ 2mA 5V
- Continuous Collector Current :
- 100mA
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Emitter Base Voltage (VEBO) :
- 5V
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- 25V
- Mount :
- Through Hole
- Lifecycle Status :
- OBSOLETE (Last Updated: 1 week ago)
- Current - Collector Cutoff (Max) :
- 15nA
- Transistor Type :
- NPN
- ECCN Code :
- EAR99
- Qualification Status :
- Not Qualified
- Transition Frequency :
- 280MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Saturation Voltage :
- 200mV
- Base Part Number :
- BC239
- Packaging :
- Bulk
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- hFE Min :
- 270
- Collector Emitter Breakdown Voltage :
- 25V
- Published :
- 2006
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Number of Terminations :
- 3
- Terminal Position :
- BOTTOM
- Datasheets
- BC239C
BC239C Documents
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NPN -55°C~150°C TJ 15nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
BC239CG Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 380 @ 2mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 200mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 5mA, 100mA.Single BJT transistor is recommended to keep the continuous collector voltage at 100mA in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 100mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 280MHz.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
BC239CG Features
the DC current gain for this device is 380 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 280MHz
BC239CG Applications
There are a lot of ON Semiconductor
BC239CG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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