BC237CG
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- Mfr.Part #
- BC237CG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A TO92
- Stock
- 37,323
- In Stock ：
- 37,323
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- hFE Min :
- 270
- HTS Code :
- 8541.21.00.75
- RoHS Status :
- RoHS Compliant
- Collector Emitter Saturation Voltage :
- 200mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gain Bandwidth Product :
- 200MHz
- Voltage - Rated DC :
- 45V
- Packaging :
- Bulk
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 350mW
- Number of Terminations :
- 3
- Mount :
- Through Hole
- Polarity/Channel Type :
- NPN
- Base Part Number :
- BC237
- Transistor Application :
- AMPLIFIER
- Collector Emitter Breakdown Voltage :
- 45V
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 380 @ 2mA 5V
- Max Collector Current :
- 100mA
- Transition Frequency :
- 200MHz
- Peak Reflow Temperature (Cel) :
- 260
- Emitter Base Voltage (VEBO) :
- 6V
- Published :
- 2006
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- JESD-609 Code :
- e1
- Current - Collector Cutoff (Max) :
- 15nA
- Current Rating :
- 100mA
- Operating Temperature :
- -55°C~150°C TJ
- Qualification Status :
- Not Qualified
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Collector Emitter Voltage (VCEO) :
- 600mV
- Transistor Type :
- NPN
- JESD-30 Code :
- O-PBCY-T3
- Collector Base Voltage (VCBO) :
- 50V
- Terminal Position :
- BOTTOM
- Mounting Type :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Element Configuration :
- Single
- Datasheets
- BC237CG
,TO-226_straightlead.jpg)
NPN -55°C~150°C TJ 15nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
BC237CG Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 380 @ 2mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 200mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 5mA, 100mA.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 100mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 200MHz.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
BC237CG Features
the DC current gain for this device is 380 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 200MHz
BC237CG Applications
There are a lot of ON Semiconductor
BC237CG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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