BC237CG
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- Mfr.Part #
- BC237CG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A TO92
- Stock
- 37,323
- In Stock ：
- 37,323
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2006
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Collector Base Voltage (VCBO) :
- 50V
- RoHS Status :
- RoHS Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Application :
- AMPLIFIER
- Gain Bandwidth Product :
- 200MHz
- Number of Terminations :
- 3
- Polarity/Channel Type :
- NPN
- ECCN Code :
- EAR99
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Collector Emitter Voltage (VCEO) :
- 600mV
- Voltage - Rated DC :
- 45V
- Collector Emitter Breakdown Voltage :
- 45V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Bulk
- Max Collector Current :
- 100mA
- Max Power Dissipation :
- 350mW
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Qualification Status :
- Not Qualified
- Mount :
- Through Hole
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 380 @ 2mA 5V
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 6V
- Current Rating :
- 100mA
- HTS Code :
- 8541.21.00.75
- JESD-30 Code :
- O-PBCY-T3
- Collector Emitter Saturation Voltage :
- 200mV
- Transition Frequency :
- 200MHz
- Pin Count :
- 3
- JESD-609 Code :
- e1
- hFE Min :
- 270
- Terminal Position :
- BOTTOM
- Current - Collector Cutoff (Max) :
- 15nA
- Lead Free :
- Lead Free
- Base Part Number :
- BC237
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- BC237CG
BC237CG Documents
,TO-226_straightlead.jpg)
NPN -55°C~150°C TJ 15nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
BC237CG Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 380 @ 2mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 200mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 5mA, 100mA.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 100mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 200MHz.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
BC237CG Features
the DC current gain for this device is 380 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 200MHz
BC237CG Applications
There are a lot of ON Semiconductor
BC237CG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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